Investigation of fundamental physical properties of CdSiP2 and its application in solar cell devices by using (ZnX; X=Se, Te) buffer layers: Fid-Bau Portal

Investigation of fundamental physical properties of CdSiP2 and its application in solar cell devices by using (ZnX; X=Se, Te) buffer layers

Verma, A. S. / Gautam, R. / Singh, P. / Sharma, S. / Kumari, S.

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Investigation of fundamental physical properties of CdSiP2 and its application in solar cell devices by using (ZnX; X=Se, Te) buffer layers

Verma, A. S. / Gautam, R. / Singh, P. / Sharma, S. / Kumari, S.

Investigation of fundamental physical properties of CdSiP2 and its application in solar cell devices by using (ZnX; X=Se, Te) buffer layers

Verma, A. S. / Gautam, R. / Singh, P. / Sharma, S. / Kumari, S.

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Bestellung bei Subito €

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Titel:

Investigation of fundamental physical properties of CdSiP2 and its application in solar cell devices by using (ZnX; X=Se, Te) buffer layers

Beteiligte:

Verma, A. S. (Autor:in) / Gautam, R. (Autor:in) / Singh, P. (Autor:in) / Sharma, S. (Autor:in) / Kumari, S. (Autor:in)

Erschienen in:

MATERIALS SCIENCE AND ENGINEERING B ADVANCED FUNCTIONAL SOLID STATE MATERIALS ; 205 ; 18-27

Erscheinungsdatum:

01.01.2016

Format / Umfang:

10 pages

ISSN:

0921-5107

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

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