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Ni-doped GST materials for high speed phase change memory applications
Ni-doped GST materials for high speed phase change memory applications
Ni-doped GST materials for high speed phase change memory applications
Zhu, Yueqin (Autor:in) / Zhang, Zhonghua (Autor:in) / Song, Sannian (Autor:in) / Xie, Huaqing (Autor:in) / Song, Zhitang (Autor:in) / Li, Xiaoyun (Autor:in) / Shen, Lanlan (Autor:in) / Li, Le (Autor:in) / Wu, Liangcai (Autor:in) / Liu, Bo (Autor:in)
Materials research bulletin ; 64 ; 333-336
01.01.2015
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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