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Interfacial properties of self-assembled GaN nanowires on pre-processed Al2O3(0001) surfaces
Interfacial properties of self-assembled GaN nanowires on pre-processed Al2O3(0001) surfaces
Interfacial properties of self-assembled GaN nanowires on pre-processed Al2O3(0001) surfaces
Koukoula, T. (Autor:in) / Kioseoglou, J. (Autor:in) / Kehagias, Th. (Autor:in) / Furtmayr, F. (Autor:in) / Eickhoff, M. (Autor:in) / Kirmse, H. (Autor:in) / Karakostas, Th. (Autor:in) / Komninou, Ph. (Autor:in)
Materials science in semiconductor processing ; 55 ; 46-50
01.01.2016
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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