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Influence of GaN/AlGaN/GaN (0001) and Si (100) substrates on structural properties of extremely thin MoS2 films grown by pulsed laser deposition
Influence of GaN/AlGaN/GaN (0001) and Si (100) substrates on structural properties of extremely thin MoS2 films grown by pulsed laser deposition
Influence of GaN/AlGaN/GaN (0001) and Si (100) substrates on structural properties of extremely thin MoS2 films grown by pulsed laser deposition
Chromik, Š. (Autor:in) / Sojková, M. (Autor:in) / Vretenár, V. (Autor:in) / Rosová, A. (Autor:in) / Dobročka, E. (Autor:in) / Hulman, M. (Autor:in)
Applied surface science ; 395 ; 232-236
01.01.2017
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.44
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