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Electrical and optical properties improvement of GeSn layers formed at high temperature under well-controlled Sn migration

Taoka, Noriyuki / Capellini, Giovanni / Schlykow, Viktoria / Montanari, Michele / Zaumseil, Peter / Nakatsuka, Osamu / Zaima, Shigeaki / Schroeder, Thomas

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Electrical and optical properties improvement of GeSn layers formed at high temperature under well-controlled Sn migration

Taoka, Noriyuki / Capellini, Giovanni / Schlykow, Viktoria / Montanari, Michele / Zaumseil, Peter / Nakatsuka, Osamu / Zaima, Shigeaki / Schroeder, Thomas

Electrical and optical properties improvement of GeSn layers formed at high temperature under well-controlled Sn migration

Taoka, Noriyuki / Capellini, Giovanni / Schlykow, Viktoria / Montanari, Michele / Zaumseil, Peter / Nakatsuka, Osamu / Zaima, Shigeaki / Schroeder, Thomas

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Titel:

Electrical and optical properties improvement of GeSn layers formed at high temperature under well-controlled Sn migration

Beteiligte:

Taoka, Noriyuki (Autor:in) / Capellini, Giovanni (Autor:in) / Schlykow, Viktoria (Autor:in) / Montanari, Michele (Autor:in) / Zaumseil, Peter (Autor:in) / Nakatsuka, Osamu (Autor:in) / Zaima, Shigeaki (Autor:in) / Schroeder, Thomas (Autor:in)

Erschienen in:

Materials science in semiconductor processing ; 57 ; 48-53

Erscheinungsdatum:

01.01.2017

Format / Umfang:

6 pages

ISSN:

Medientyp:

Aufsatz (Zeitschrift)

Format:

Print

Sprache:

Englisch

Klassifikation:

© Metadata Copyright the British Library Board and other contributors. All rights reserved.

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