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Growth mechanism of In–doped β–Ga2O3 nanowires deposited by radio frequency powder sputtering
Growth mechanism of In–doped β–Ga2O3 nanowires deposited by radio frequency powder sputtering
Growth mechanism of In–doped β–Ga2O3 nanowires deposited by radio frequency powder sputtering
Lee, S.Y. (Autor:in) / Choi, K.H. (Autor:in) / Kang, H.C. (Autor:in)
MATERIALS LETTERS ; 176 ; 213-218
01.01.2016
6 pages
Aufsatz (Zeitschrift)
Unbekannt
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Growth mechanism of In–doped β–Ga2O3 nanowires deposited by radio frequency powder sputtering
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