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Ab initio study of point defects near stacking faults in 3C-SiC
Ab initio study of point defects near stacking faults in 3C-SiC
Ab initio study of point defects near stacking faults in 3C-SiC
Xi, Jianqi (Autor:in) / Liu, Bin (Autor:in) / Zhang, Yanwen (Autor:in) / Weber, William J. (Autor:in)
Computational materials science ; 123 ; 131-138
01.01.2016
8 pages
Aufsatz (Zeitschrift)
Unbekannt
DDC:
620.1
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