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Early stage of Cs activation mechanism for In0.53Ga0.47As (0 0 1) β2 (2 × 4) surfaces: Insights from first-principles calculations
Early stage of Cs activation mechanism for In0.53Ga0.47As (0 0 1) β2 (2 × 4) surfaces: Insights from first-principles calculations
Early stage of Cs activation mechanism for In0.53Ga0.47As (0 0 1) β2 (2 × 4) surfaces: Insights from first-principles calculations
Shen, Yang (Autor:in) / Yang, Xiaodong (Autor:in) / Bian, Yue (Autor:in) / Chen, Liang (Autor:in) / Tang, Kun (Autor:in) / Wan, Jianguo (Autor:in) / Zhang, Rong (Autor:in) / Zheng, Youdou (Autor:in) / Gu, Shulin (Autor:in)
Applied surface science ; 457 ; 150-155
01.01.2018
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.44
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