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AlGaInAs capping layer impact on emission and structure of AlGaAs/GaAs quantum wells with InAs quantum dots
AlGaInAs capping layer impact on emission and structure of AlGaAs/GaAs quantum wells with InAs quantum dots
AlGaInAs capping layer impact on emission and structure of AlGaAs/GaAs quantum wells with InAs quantum dots
Cisneros Tamayo, R. (Autor:in) / Polupan, G. (Autor:in) / Torchynska, T.V. (Autor:in) / Vega-Macotela, L.G. (Autor:in) / Stintz, A. (Autor:in) / Escobosa Echavarria, A. (Autor:in)
Materials science in semiconductor processing ; 90 ; 212-218
01.01.2019
7 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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