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Electronic properties of defects induced by hydrogen and helium radiation on Weyl semimetal niobium arsenic
Electronic properties of defects induced by hydrogen and helium radiation on Weyl semimetal niobium arsenic
Electronic properties of defects induced by hydrogen and helium radiation on Weyl semimetal niobium arsenic
Zhang, Zhao-Jun (Autor:in) / Fu, Yan-Long (Autor:in) / Cheng, Wei (Autor:in) / Zhang, Feng-Shou (Autor:in)
Computational materials science ; 160 ; 9-15
01.01.2019
7 pages
Aufsatz (Zeitschrift)
Unbekannt
DDC:
620.1
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