Tuning the electronic structure of GeC/WS2 van der Waals heterostructure by electric field and strain: A first principles study: Fid-Bau Portal

Tuning the electronic structure of GeC/WS2 van der Waals heterostructure by electric field and strain: A first principles study

Shi, Jianying / Ou, Yang / Migliorato, Max A. / Wang, Hongyu / Li, Hui / Zhang, Yue / Gu, Yousong / Zou, Mingqiang

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Tuning the electronic structure of GeC/WS2 van der Waals heterostructure by electric field and strain: A first principles study

Shi, Jianying / Ou, Yang / Migliorato, Max A. / Wang, Hongyu / Li, Hui / Zhang, Yue / Gu, Yousong / Zou, Mingqiang

Tuning the electronic structure of GeC/WS2 van der Waals heterostructure by electric field and strain: A first principles study

Shi, Jianying / Ou, Yang / Migliorato, Max A. / Wang, Hongyu / Li, Hui / Zhang, Yue / Gu, Yousong / Zou, Mingqiang

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Titel:

Tuning the electronic structure of GeC/WS2 van der Waals heterostructure by electric field and strain: A first principles study

Beteiligte:

Shi, Jianying (Autor:in) / Ou, Yang (Autor:in) / Migliorato, Max A. (Autor:in) / Wang, Hongyu (Autor:in) / Li, Hui (Autor:in) / Zhang, Yue (Autor:in) / Gu, Yousong (Autor:in) / Zou, Mingqiang (Autor:in)

Erschienen in:

Computational materials science ; 160 ; 301-308

Erscheinungsdatum:

01.01.2019

Format / Umfang:

8 pages

ISSN:

0927-0256

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Unbekannt

Klassifikation:

DDC: 620.1

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