Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Synthesis and characterization of Fe-doped SnS thin films by chemical bath deposition technique for solar cells applications
Undoped zinc blend tin sulphide can be used as an absorber material in thin film solar cells. In the present study, SnS thin film has been doped with iron (Fe) at different concentrations (y = [Fe]/[Sn] = 4%, 6%, 8%, 10%). Structural, morphological, chemical, optical, and electrical properties were studied by X-Ray diffraction, scanning electron microscopy associated with energy dispersive spectroscopy, atomic force microscopy, and thermally stimulated current. X-ray diffraction study shows that better crystallinity is obtained for y = 8%. Scanning electron microscopy reveals that the surface morphology of the films strongly depends on the doping concentration. The energy dispersive spectroscopy shows the presence of Fe. The band gap energy is found to be about 1.6 eV. The thermally stimulated current is dominated by the trapping centers. It increases for y = 4% compared to the undoped SnS thin film. The activation energy of trapping centers in undoped and doped SnS thin layers is also calculated.
Synthesis and characterization of Fe-doped SnS thin films by chemical bath deposition technique for solar cells applications
Undoped zinc blend tin sulphide can be used as an absorber material in thin film solar cells. In the present study, SnS thin film has been doped with iron (Fe) at different concentrations (y = [Fe]/[Sn] = 4%, 6%, 8%, 10%). Structural, morphological, chemical, optical, and electrical properties were studied by X-Ray diffraction, scanning electron microscopy associated with energy dispersive spectroscopy, atomic force microscopy, and thermally stimulated current. X-ray diffraction study shows that better crystallinity is obtained for y = 8%. Scanning electron microscopy reveals that the surface morphology of the films strongly depends on the doping concentration. The energy dispersive spectroscopy shows the presence of Fe. The band gap energy is found to be about 1.6 eV. The thermally stimulated current is dominated by the trapping centers. It increases for y = 4% compared to the undoped SnS thin film. The activation energy of trapping centers in undoped and doped SnS thin layers is also calculated.
Synthesis and characterization of Fe-doped SnS thin films by chemical bath deposition technique for solar cells applications
Reghima, Meriem (Autor:in) / Akkari, Anis (Autor:in) / Guasch, Cathy (Autor:in) / Castagné, Michel (Autor:in) / Kamoun-Turki, Najoua (Autor:in)
01.11.2013
10 pages
Aufsatz (Zeitschrift)
Elektronische Ressource
Englisch
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