Low-Powered Photodetector Based on Two-Dimensional InS0.3Se0.7/WS2 Heterostructure: Fid-Bau Portal

Low-Powered Photodetector Based on Two-Dimensional InS_0.3Se_0.7/WS₂ Heterostructure

Kaiting Zhang / Jie Chang / Chaoyang Tan / Hui Han

Photodetectors based on two-dimensional (2D) materials have great potential applications in the field of new energy, such as fuel cells, solar cells, and other fields. Van der Waals (vdW) heterojunction photodiodes are expected to be one of the promising applications of two-dimensional materials due to the photoelectric properties without consideration of lattice mismatch. High-efficiency photoelectric sensors based on two-dimensional materials have great significance to reducing the energy consumption of devices. Here, we build a complex vdW heterostructure by combining InS_0.3Se_0.7 with another suitable 2D material WS₂. Few-layer graphite was used as electrodes to enhance the optoelectronic performance of indium monochalcogenides. Evident photocurrent is observed in the InS_0.3Se_0.7/WS₂ vdW heterostructure device arising from the formed p–n junction at the interface. The uniformity and photoresponse of the InS_0.3Se_0.7/WS₂ vdW heterostructure has been further investigated by the photocurrent mapping. It shows that the entire photovoltaic current was originated from the InS_0.3Se_0.7/WS₂ vdW heterojunction by scanning photocurrent microscope images. Furthermore, the response speed is enhanced at small bias voltage. The transient photoresponse can be well reproduced in almost 100 cycles, indicating the good repeatable optoelectronic performance. Our study indicates that the as-prepared InS_0.3Se_0.7/WS₂ vdW heterostructures are attractive building blocks for photodetectors application. Our findings will open up a new way to further develop high-performance, low-power, and energy-efficient photodetectors based on indium monochalcogenides.