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Voltage-current characteristics; direct and indirect tunneling effects; reverse current characteristics; energy band structure; light emission at gallium arsenide p-n junctions associated with tunneling; carrier concentration and temperature effects and tunnel current; properties of and contributing factors in excess forward current; piezoresistive effect for case of hydrostatic pressure and pressure in uniaxial direction. (English translation of Denki Tsushin Gakkai Zasshi)
Voltage-current characteristics; direct and indirect tunneling effects; reverse current characteristics; energy band structure; light emission at gallium arsenide p-n junctions associated with tunneling; carrier concentration and temperature effects and tunnel current; properties of and contributing factors in excess forward current; piezoresistive effect for case of hydrostatic pressure and pressure in uniaxial direction. (English translation of Denki Tsushin Gakkai Zasshi)
Physical phenomena associated with Esaki diodes
Electronics Communications Japan
Imai, T. (Autor:in)
1964
14 pages
Aufsatz (Zeitschrift)
Englisch
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