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Preparation method of nano H-In2O3 ceramic
The invention discloses a preparation method of nano H-In2O3 ceramic. The preparation method comprises the following steps: mixing InC13.4H2O, deionized water and ethanediamine evenly, putting the mixture into an drying oven, preserving heat at a drying oven heat preservation temperature of 160-200 DEG C for 20-30 hours, taking out and cooling to a room temperature, washing by use of distilled water and absolute ethyl alcohol, and drying to obtain a precursor; putting the precursor into a reaction container, putting the reaction container with the precursor into a reaction furnace, and preserving heat for 0.8-1.2 hours to obtain H-In2O3 nano crystals, wherein the temperature of the reaction furnace ranges from 300 to 500 DEG C; and putting the H-In2O3 nano crystals into the reaction furnace and preserving heat and pressure for 1-3 hours to obtain the nano H-In2O3 ceramic, wherein the temperature of the reaction furnace ranges from 700 to 1000 DEG C, and the pressure in the reaction furnace ranges from 40 to 70MPa. The preparation method of the nano H-In2O3 ceramic is low in reaction requirements, energy-saving and environment-friendly, and further is simple, and convenient to operate.
Preparation method of nano H-In2O3 ceramic
The invention discloses a preparation method of nano H-In2O3 ceramic. The preparation method comprises the following steps: mixing InC13.4H2O, deionized water and ethanediamine evenly, putting the mixture into an drying oven, preserving heat at a drying oven heat preservation temperature of 160-200 DEG C for 20-30 hours, taking out and cooling to a room temperature, washing by use of distilled water and absolute ethyl alcohol, and drying to obtain a precursor; putting the precursor into a reaction container, putting the reaction container with the precursor into a reaction furnace, and preserving heat for 0.8-1.2 hours to obtain H-In2O3 nano crystals, wherein the temperature of the reaction furnace ranges from 300 to 500 DEG C; and putting the H-In2O3 nano crystals into the reaction furnace and preserving heat and pressure for 1-3 hours to obtain the nano H-In2O3 ceramic, wherein the temperature of the reaction furnace ranges from 700 to 1000 DEG C, and the pressure in the reaction furnace ranges from 40 to 70MPa. The preparation method of the nano H-In2O3 ceramic is low in reaction requirements, energy-saving and environment-friendly, and further is simple, and convenient to operate.
Preparation method of nano H-In2O3 ceramic
ZHANG JINHUA (Autor:in) / YU DABIN (Autor:in) / WANG YAN (Autor:in) / WANG FENG (Autor:in) / FENG YUEYUE (Autor:in) / WANG ZIRONG (Autor:in) / YUAN ZHONGCAI (Autor:in) / ZHAO DAPENG (Autor:in) / GAN GUIHUA (Autor:in)
01.04.2015
Patent
Elektronische Ressource
Englisch
IPC:
C04B
Kalk
,
LIME
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