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Bismuth layer-structured piezoelectric ceramic material and preparation method thereof
The invention discloses a low-temperature sintered bismuth layer-structured piezoelectric ceramic material and a preparation method thereof. A chemical general formula of the piezoelectric ceramic material is Ca1-x-yLixAyBzBi4Ti4-zO15, wherein A is one or more of valence-variable doping elements Ce, Mn and Sr; B is one or more of valence-variable doping elements Cr, Nb and W; x, y and z are respectively mole fractions of a Li element, an A-position element and a B-position element; x is smaller than or equal to 0.1 and greater than 0; y is smaller than or equal to 0.1 and greater than or equal to 0; z is smaller than or equal to 0.1 and greater than or equal to 0; and y and z are not simultaneously zero. The piezoelectric ceramic material disclosed by the invention has the advantages of relatively low sintering preparation temperature, relatively high curie temperature, and excellent piezoelectric property and overall dielectric properties, and can be applied to various high-temperature piezoelectric devices.
Bismuth layer-structured piezoelectric ceramic material and preparation method thereof
The invention discloses a low-temperature sintered bismuth layer-structured piezoelectric ceramic material and a preparation method thereof. A chemical general formula of the piezoelectric ceramic material is Ca1-x-yLixAyBzBi4Ti4-zO15, wherein A is one or more of valence-variable doping elements Ce, Mn and Sr; B is one or more of valence-variable doping elements Cr, Nb and W; x, y and z are respectively mole fractions of a Li element, an A-position element and a B-position element; x is smaller than or equal to 0.1 and greater than 0; y is smaller than or equal to 0.1 and greater than or equal to 0; z is smaller than or equal to 0.1 and greater than or equal to 0; and y and z are not simultaneously zero. The piezoelectric ceramic material disclosed by the invention has the advantages of relatively low sintering preparation temperature, relatively high curie temperature, and excellent piezoelectric property and overall dielectric properties, and can be applied to various high-temperature piezoelectric devices.
Bismuth layer-structured piezoelectric ceramic material and preparation method thereof
GUO DONG (Autor:in) / DENG PINGYE (Autor:in) / CAI KAI (Autor:in) / JIANG FENG (Autor:in) / LI HAORAN (Autor:in)
22.04.2015
Patent
Elektronische Ressource
Englisch
IPC:
C04B
Kalk
,
LIME
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