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Solvothermal preparation method of silicon-surface vertically-assembled CeO2 nanorod film
The invention relates to a solvothermal preparation method of a silicon-surface vertically-assembled CeO2 nanorod film, which comprises the following steps: preparing a precursor solution by using ethanol as a solvent, and reacting the raw materials CeCl3 and CO(NH2)2 under the solvothermal conditions of 160-200 DEG C by using a clean silicon chip as a base to prepare the film formed by vertically assembling CeO2 nanorods on the silicon chip surface. The method has the advantages of simple equipment and low film-preparation cost, and does not need to perform high-temperature treatment on the silicon base and film. The prepared film is vertically assembled from the CeO2 nanorods, is thin and uniform, has the advantages of high visible light transparency, favorable adhesiveness and high ultraviolet resistance, has very strong emission peak at 380-390nm, and has wide application prospects in the aspect of crystalline silicon solar cell ultraviolet resistance.
Solvothermal preparation method of silicon-surface vertically-assembled CeO2 nanorod film
The invention relates to a solvothermal preparation method of a silicon-surface vertically-assembled CeO2 nanorod film, which comprises the following steps: preparing a precursor solution by using ethanol as a solvent, and reacting the raw materials CeCl3 and CO(NH2)2 under the solvothermal conditions of 160-200 DEG C by using a clean silicon chip as a base to prepare the film formed by vertically assembling CeO2 nanorods on the silicon chip surface. The method has the advantages of simple equipment and low film-preparation cost, and does not need to perform high-temperature treatment on the silicon base and film. The prepared film is vertically assembled from the CeO2 nanorods, is thin and uniform, has the advantages of high visible light transparency, favorable adhesiveness and high ultraviolet resistance, has very strong emission peak at 380-390nm, and has wide application prospects in the aspect of crystalline silicon solar cell ultraviolet resistance.
Solvothermal preparation method of silicon-surface vertically-assembled CeO2 nanorod film
LIU LIANLI (Autor:in) / SUN TONG (Autor:in) / WANG LILI (Autor:in) / CUI YAN (Autor:in) / ZHANG FAN (Autor:in) / SUN ZHIJIA (Autor:in)
20.05.2015
Patent
Elektronische Ressource
Englisch
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