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High-temperature ferrimagnetic semiconductor CaCu3Fe2Os2O12 and preparation method thereof
The invention discloses a novel high-temperature ferrimagnetic semiconductor. The chemical formula of the high-temperature ferrimagnetic semiconductor is CaCu3Fe2Os2O12, the high-temperature ferrimagnetic semiconductor has high-temperature ferrimagnetism, and the Curie temperature of the high-temperature ferrimagnetic semiconductor approaches 600K. The invention also discloses a preparation method of the high-temperature ferrimagnetic semiconductor. The method comprises the following steps: uniformly mixing CaO, Fe2O3, CuO, Os and an oxygen source to obtain a mixture; grinding; filling a gold or platinum capsule with the mixture, and sealing; carrying out high temperature and high pressure treatment on the obtained gold or platinum capsule in a high pressure device; annealing or quenching; cooling, and releasing the pressure; taking out the obtained reaction product from the gold or platinum capsule, and fully grinding; and cleaning. The high-temperature ferrimagnetic semiconductor CaCu3Fe2Os2O12 has high Curie temperature and wide semiconductor energy gap, and has potential application values in future spintronic devices.
High-temperature ferrimagnetic semiconductor CaCu3Fe2Os2O12 and preparation method thereof
The invention discloses a novel high-temperature ferrimagnetic semiconductor. The chemical formula of the high-temperature ferrimagnetic semiconductor is CaCu3Fe2Os2O12, the high-temperature ferrimagnetic semiconductor has high-temperature ferrimagnetism, and the Curie temperature of the high-temperature ferrimagnetic semiconductor approaches 600K. The invention also discloses a preparation method of the high-temperature ferrimagnetic semiconductor. The method comprises the following steps: uniformly mixing CaO, Fe2O3, CuO, Os and an oxygen source to obtain a mixture; grinding; filling a gold or platinum capsule with the mixture, and sealing; carrying out high temperature and high pressure treatment on the obtained gold or platinum capsule in a high pressure device; annealing or quenching; cooling, and releasing the pressure; taking out the obtained reaction product from the gold or platinum capsule, and fully grinding; and cleaning. The high-temperature ferrimagnetic semiconductor CaCu3Fe2Os2O12 has high Curie temperature and wide semiconductor energy gap, and has potential application values in future spintronic devices.
High-temperature ferrimagnetic semiconductor CaCu3Fe2Os2O12 and preparation method thereof
LONG YOUWEN (Autor:in) / DENG HONGWEI (Autor:in) / YIN YUNYU (Autor:in)
19.08.2015
Patent
Elektronische Ressource
Englisch
IPC:
C04B
Kalk
,
LIME
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