Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
High-thermal-conductivity reaction-sintered silicon carbide ceramic material and preparation method thereof
The invention relates to a high-thermal-conductivity reaction-sintered silicon carbide ceramic material and a preparation method thereof. The high-thermal-conductivity reaction-sintered silicon carbide ceramic material comprises 50-90wt.% of silicon carbide, 0.5-12.5wt.% of graphene, 1-3wt.% of surfactants, 0.5-2.5wt.% of dispersing agents and 0.3-1.5wt.% of binders. The high-thermal-conductivity reaction-sintered silicon carbide ceramic material is prepared by means of raw material mixing, shaping and reactive sintering for 8-12 hours at the temperature of 1650-1800 DEG C under a vacuum condition. The prepared SiC (silicon carbide) ceramic material has the advantages of high hardness, low thermal expansion coefficient, high thermal conductivity, more uniformity in material performance and higher service reliability.
High-thermal-conductivity reaction-sintered silicon carbide ceramic material and preparation method thereof
The invention relates to a high-thermal-conductivity reaction-sintered silicon carbide ceramic material and a preparation method thereof. The high-thermal-conductivity reaction-sintered silicon carbide ceramic material comprises 50-90wt.% of silicon carbide, 0.5-12.5wt.% of graphene, 1-3wt.% of surfactants, 0.5-2.5wt.% of dispersing agents and 0.3-1.5wt.% of binders. The high-thermal-conductivity reaction-sintered silicon carbide ceramic material is prepared by means of raw material mixing, shaping and reactive sintering for 8-12 hours at the temperature of 1650-1800 DEG C under a vacuum condition. The prepared SiC (silicon carbide) ceramic material has the advantages of high hardness, low thermal expansion coefficient, high thermal conductivity, more uniformity in material performance and higher service reliability.
High-thermal-conductivity reaction-sintered silicon carbide ceramic material and preparation method thereof
ZHANG YUJUN (Autor:in) / LI QISONG (Autor:in) / GONG HONGYU (Autor:in) / SUN HAIBIN (Autor:in) / ZHANG YANSHUANG (Autor:in)
23.09.2015
Patent
Elektronische Ressource
Englisch
IPC:
C04B
Kalk
,
LIME
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