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Silicon nitride binding silicon carbide refractory material and preparation method therefor
The present invention relates to a silicon nitride binding silicon carbide refractory material and a preparation method therefor. The technical scheme is: using 45-89 wt% of silicon carbide, 10-50 wt% of elemental silicon powder and 0.1-5 wt% of chromium powder as raw materials; additionally adding 3-9 wt% of binder of the raw materials; performing stirring uniformly and press forming; drying a formed green body at 110 DEG C for 10-48 hours; raising the temperature of the dried green body to 1300-1400 DEG C at a rate of 2-10 DEG C/min in the nitrogen atmosphere; performing incubating for 2-20 hours; and cooling the substance along with a furnace, to obtain a silicon nitride binding silicon carbide refractory material. The preparation method of the present invention is characterized by a low reaction temperature, a complete reaction and a wide industrial prospect, and the silicon nitride binding silicon carbide refractory material that is prepared is small in porosity, high in strength, good in thermal shock resistance, excellent in corrosion resistance and long in service life.
Silicon nitride binding silicon carbide refractory material and preparation method therefor
The present invention relates to a silicon nitride binding silicon carbide refractory material and a preparation method therefor. The technical scheme is: using 45-89 wt% of silicon carbide, 10-50 wt% of elemental silicon powder and 0.1-5 wt% of chromium powder as raw materials; additionally adding 3-9 wt% of binder of the raw materials; performing stirring uniformly and press forming; drying a formed green body at 110 DEG C for 10-48 hours; raising the temperature of the dried green body to 1300-1400 DEG C at a rate of 2-10 DEG C/min in the nitrogen atmosphere; performing incubating for 2-20 hours; and cooling the substance along with a furnace, to obtain a silicon nitride binding silicon carbide refractory material. The preparation method of the present invention is characterized by a low reaction temperature, a complete reaction and a wide industrial prospect, and the silicon nitride binding silicon carbide refractory material that is prepared is small in porosity, high in strength, good in thermal shock resistance, excellent in corrosion resistance and long in service life.
Silicon nitride binding silicon carbide refractory material and preparation method therefor
LIANG FENG (Autor:in) / ZHANG HAIJUN (Autor:in) / ZHANG SHAOWEI (Autor:in) / LU LILIN (Autor:in) / LI FALIANG (Autor:in) / DUAN HONGJUAN (Autor:in) / LIU JIANGHAO (Autor:in)
21.10.2015
Patent
Elektronische Ressource
Englisch
IPC:
C04B
Kalk
,
LIME
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