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Method for preparing high-pressure-resisting and multi-layer ceramic capacitor dielectric material
The invention discloses a method for preparing a high-pressure-resisting and multi-layer ceramic capacitor dielectric material. BaTiO3 powder serves as the base material, and (ZnO)1-x(NbO2.5)x nano powder with the mass percent of 0.8-1.2 and CaZrO3 with the mass percent of 3.0-4.0% are additionally added on the basis, wherein x ranges from 0.6 to 0.8. The compound of (ZnO)1-x(NbO2.5)x is synthesized through the raw materials of Zn(NO3).6H2O and Nb2O5 through a sol-gel method according to the mole ratio of 1-x:x/2, wherein x ranges from 0.6-0.8. CaZrO3 is synthesized through CaCO3 and ZrO2 according to a mass ratio of 1:1. According to the method for preparing the high-pressure-resisting and multi-layer ceramic capacitor material, the microstructure of ceramic is improved effectively, the pressure-resistance performance is improved, and the pressure-resistance value of the material reaches 13 kv/mm or higher. In the area with the temperature of -55-150 DEG C, the capacitance rate of change is within +/-15%, and the material has a high room temperature dielectric constant (around 4000) and the low dielectric loss (tan delta is smaller than 1.0%).
Method for preparing high-pressure-resisting and multi-layer ceramic capacitor dielectric material
The invention discloses a method for preparing a high-pressure-resisting and multi-layer ceramic capacitor dielectric material. BaTiO3 powder serves as the base material, and (ZnO)1-x(NbO2.5)x nano powder with the mass percent of 0.8-1.2 and CaZrO3 with the mass percent of 3.0-4.0% are additionally added on the basis, wherein x ranges from 0.6 to 0.8. The compound of (ZnO)1-x(NbO2.5)x is synthesized through the raw materials of Zn(NO3).6H2O and Nb2O5 through a sol-gel method according to the mole ratio of 1-x:x/2, wherein x ranges from 0.6-0.8. CaZrO3 is synthesized through CaCO3 and ZrO2 according to a mass ratio of 1:1. According to the method for preparing the high-pressure-resisting and multi-layer ceramic capacitor material, the microstructure of ceramic is improved effectively, the pressure-resistance performance is improved, and the pressure-resistance value of the material reaches 13 kv/mm or higher. In the area with the temperature of -55-150 DEG C, the capacitance rate of change is within +/-15%, and the material has a high room temperature dielectric constant (around 4000) and the low dielectric loss (tan delta is smaller than 1.0%).
Method for preparing high-pressure-resisting and multi-layer ceramic capacitor dielectric material
LI LINGXIA (Autor:in) / YU JINGYANG (Autor:in) / ZHANG NING (Autor:in) / ZHANG BOWEN (Autor:in) / LI SAI (Autor:in)
04.11.2015
Patent
Elektronische Ressource
Englisch
IPC:
C04B
Kalk
,
LIME
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