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Preparation method of BZT (barium titanate zirconate) target material for magnetron sputtering
The invention discloses a preparation method of a BZT (barium titanate zirconate) target material for magnetron sputtering. The method comprises the steps of firstly mixing the raw materials of BaCO3, ZrO2 and TiO2 according to the molecular formula, namely Ba(ZrxTi1-x)O3, of the BTZ and according to the molar mass of components in the Ba(ZrxTi1-x)O3, wherein x is larger than 0 and less than 1, after ball milling, performing presintering at the temperature of 1,000 to 1,200 DEG C, additionally adding 0.5 to 5wt percent of PVA, performing secondary ball milling, and performing compression moulding to form a green body after drying and screening; dumping the green body at the temperature of 600 to 800 DEG C, and sintering at the temperature of 1,300 to 1,400 DEG C, so as to prepare the BZT target material. According to the preparation method provided by the invention, a solid phase method is adopted for the first time, the diameter of the provided BZT target material is 32 to 80mm, can meet the demands of magnetron sputtering with different size requirements, and is suitable for different performance requirement, the surface of the target material is flat, and the warping degree of the target material is less than 5 percent.
Preparation method of BZT (barium titanate zirconate) target material for magnetron sputtering
The invention discloses a preparation method of a BZT (barium titanate zirconate) target material for magnetron sputtering. The method comprises the steps of firstly mixing the raw materials of BaCO3, ZrO2 and TiO2 according to the molecular formula, namely Ba(ZrxTi1-x)O3, of the BTZ and according to the molar mass of components in the Ba(ZrxTi1-x)O3, wherein x is larger than 0 and less than 1, after ball milling, performing presintering at the temperature of 1,000 to 1,200 DEG C, additionally adding 0.5 to 5wt percent of PVA, performing secondary ball milling, and performing compression moulding to form a green body after drying and screening; dumping the green body at the temperature of 600 to 800 DEG C, and sintering at the temperature of 1,300 to 1,400 DEG C, so as to prepare the BZT target material. According to the preparation method provided by the invention, a solid phase method is adopted for the first time, the diameter of the provided BZT target material is 32 to 80mm, can meet the demands of magnetron sputtering with different size requirements, and is suitable for different performance requirement, the surface of the target material is flat, and the warping degree of the target material is less than 5 percent.
Preparation method of BZT (barium titanate zirconate) target material for magnetron sputtering
LI LINGXIA (Autor:in) / SUN ZHENG (Autor:in) / ZHENG HAORAN (Autor:in) / LUO WEIJIA (Autor:in)
11.11.2015
Patent
Elektronische Ressource
Englisch
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