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X8R type double-doped barium titanate ceramic dielectric material with smooth and stable dielectric temperature and preparation method thereof
The invention provides a leadless BaTiO<3>-based ceramic capacitor dielectric material meeting X8R indexes. The chemical composition of the dielectric material is as described in (Ba<1-x>Dy)(Ti<1-x/2>Ca)O<3>, wherein x is no less than 10 mol% and no more than 15 mol%. The performance of the ceramic dielectric material prepared in the invention reaches the following indexes: dielectric temperature is smooth and stable; a crystal size is small; single-phase ceramic is obtained; a main perovskite structure expressed by the chemical formula ABO3 is obtained, wherein the main component of a main base material is BaTiO<3>, and the content of BaTiO<3> is no less than 77 mol; the average crystal size of the material can be controlled to be no more than 1.2 [mu] m; a room temperature dielectric constant is in a range of 1500 to 1800; a temperature coefficient of capacitance is in a range of +15% to -15%; and room temperature dielectric loss is no more than 2.3%.
X8R type double-doped barium titanate ceramic dielectric material with smooth and stable dielectric temperature and preparation method thereof
The invention provides a leadless BaTiO<3>-based ceramic capacitor dielectric material meeting X8R indexes. The chemical composition of the dielectric material is as described in (Ba<1-x>Dy)(Ti<1-x/2>Ca)O<3>, wherein x is no less than 10 mol% and no more than 15 mol%. The performance of the ceramic dielectric material prepared in the invention reaches the following indexes: dielectric temperature is smooth and stable; a crystal size is small; single-phase ceramic is obtained; a main perovskite structure expressed by the chemical formula ABO3 is obtained, wherein the main component of a main base material is BaTiO<3>, and the content of BaTiO<3> is no less than 77 mol; the average crystal size of the material can be controlled to be no more than 1.2 [mu] m; a room temperature dielectric constant is in a range of 1500 to 1800; a temperature coefficient of capacitance is in a range of +15% to -15%; and room temperature dielectric loss is no more than 2.3%.
X8R type double-doped barium titanate ceramic dielectric material with smooth and stable dielectric temperature and preparation method thereof
LU DAYONG (Autor:in) / HAN DANDAN (Autor:in) / SUN XIUYUN (Autor:in) / LIU QIAOLI (Autor:in) / CUI SHUZHEN (Autor:in)
16.12.2015
Patent
Elektronische Ressource
Englisch
IPC:
C04B
Kalk
,
LIME
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