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Sintering temperature-sensitive bismuth titanate-based lead-free dielectric ceramic material
The present invention discloses preparation and electrical property characterization of a sintering temperature-sensitive bismuth titanate-based lead-free dielectric ceramic material, wherein the chemical general formula of the ceramic is Bi4Ti3O12, primary pre-burning is performed at a temperature of 800 DEG C by using a traditional solid-phase method, and sintering is performed at two different temperatures such as 1100 DEG C and 1150 DEG C. According to the present invention, the Curie temperature is 663 DEG C when the sintering temperature is 1100 DEG C, the relative dielectric constant close to the Curie temperature achieves more than or equal to 76.7, while the Curie temperature is 656 DEG C when the sintering temperature is 1150 DEG C, the relative minimum dielectric constant close to the Curie temperature can achieve 22.67, such that the preferred ceramic sheet achieving the relative dielectric constant of more than or equal to 76.7 has the small dielectric loss; the activation energy of the prepared ceramic sheet is 0.50-0.73 through electric mode coefficient calculation; and when the sintering temperature is only increased by 50 DEG C, the significant changes are generated in the value and the change trends of the dielectric constant, the dielectric loss and the like of the material.
Sintering temperature-sensitive bismuth titanate-based lead-free dielectric ceramic material
The present invention discloses preparation and electrical property characterization of a sintering temperature-sensitive bismuth titanate-based lead-free dielectric ceramic material, wherein the chemical general formula of the ceramic is Bi4Ti3O12, primary pre-burning is performed at a temperature of 800 DEG C by using a traditional solid-phase method, and sintering is performed at two different temperatures such as 1100 DEG C and 1150 DEG C. According to the present invention, the Curie temperature is 663 DEG C when the sintering temperature is 1100 DEG C, the relative dielectric constant close to the Curie temperature achieves more than or equal to 76.7, while the Curie temperature is 656 DEG C when the sintering temperature is 1150 DEG C, the relative minimum dielectric constant close to the Curie temperature can achieve 22.67, such that the preferred ceramic sheet achieving the relative dielectric constant of more than or equal to 76.7 has the small dielectric loss; the activation energy of the prepared ceramic sheet is 0.50-0.73 through electric mode coefficient calculation; and when the sintering temperature is only increased by 50 DEG C, the significant changes are generated in the value and the change trends of the dielectric constant, the dielectric loss and the like of the material.
Sintering temperature-sensitive bismuth titanate-based lead-free dielectric ceramic material
CHEN YONG (Autor:in) / CUI YAPING (Autor:in) / QIU LICHUN (Autor:in) / ZHOU CHAO (Autor:in) / LI ZHANG (Autor:in) / HUANG HANHUA (Autor:in)
16.12.2015
Patent
Elektronische Ressource
Englisch
IPC:
C04B
Kalk
,
LIME
| Europäisches Patentamt | 2023
| Europäisches Patentamt | 2015
| Europäisches Patentamt | 2023
Europäisches Patentamt | 2017