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Oxide sintered compact, method for manufacturing same, sputtering target, and semiconductor device
Provided are: an oxide sintered compact comprising indium, tungsten, and zinc, the oxide sintered compact comprising a bixbyite-type crystal phase as a primary component, the apparent density being greater than 6.5 g/cm3 and no greater than 7.1 g/cm3, and the tungsten content with respect to the total content of indium, tungsten, and zinc being greater than 1.2 at% and less than 30 at%; a sputtering target comprising this oxide sintered compact; and a semiconductor device (10) comprising an oxide semiconductor film (14) formed by the sputtering method using this sputtering target.
Oxide sintered compact, method for manufacturing same, sputtering target, and semiconductor device
Provided are: an oxide sintered compact comprising indium, tungsten, and zinc, the oxide sintered compact comprising a bixbyite-type crystal phase as a primary component, the apparent density being greater than 6.5 g/cm3 and no greater than 7.1 g/cm3, and the tungsten content with respect to the total content of indium, tungsten, and zinc being greater than 1.2 at% and less than 30 at%; a sputtering target comprising this oxide sintered compact; and a semiconductor device (10) comprising an oxide semiconductor film (14) formed by the sputtering method using this sputtering target.
Oxide sintered compact, method for manufacturing same, sputtering target, and semiconductor device
MIYANAGA MIKI (Autor:in) / WATATANI KENICHI (Autor:in) / SOGABE KOICHI (Autor:in)
13.01.2016
Patent
Elektronische Ressource
Englisch
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