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Method for preparing high-thermal-conductivity silicon nitride ceramics
The invention relates to a method for preparing high-thermal-conductivity silicon nitride ceramics. The method comprises the steps that firstly, thermal treatment and acid pickling treatment are carried out on Si3N4 powder, and then Si3N4 slurry is prepared; an Si3N4 thin layer is prepared through a casting process technology, and porous silicon nitride powder prefabricated bodies are obtained after the thin layer is cut and overlapped; the prefabricated bodies are subjected to liquid silicon penetration through high-purity silicon powder, and compact Si3N4/Si is obtained; nitrogen treatment is carried out on Si3N4/Si in a nitrogenation oven, so that Si in the material is subjected to a nitriding reaction to generate Si3N4. Compared with frequently-used processes for preparing the high-thermal-conductivity silicon nitride ceramics, such as isostatic pressing sintering and hot pressed sintering, a tape casting method is combined with liquid silicon penetration forming and nitriding sintering processes, no or little machining is needed, preparation temperature is low, no sintering additive needs to be added, and the influence of a grain boundary on the thermal conductivity of the material is avoided. The thermal conductivity of the prepared silicon nitride ceramics can reach 80-120 Wm<-1>K<-1>.
Method for preparing high-thermal-conductivity silicon nitride ceramics
The invention relates to a method for preparing high-thermal-conductivity silicon nitride ceramics. The method comprises the steps that firstly, thermal treatment and acid pickling treatment are carried out on Si3N4 powder, and then Si3N4 slurry is prepared; an Si3N4 thin layer is prepared through a casting process technology, and porous silicon nitride powder prefabricated bodies are obtained after the thin layer is cut and overlapped; the prefabricated bodies are subjected to liquid silicon penetration through high-purity silicon powder, and compact Si3N4/Si is obtained; nitrogen treatment is carried out on Si3N4/Si in a nitrogenation oven, so that Si in the material is subjected to a nitriding reaction to generate Si3N4. Compared with frequently-used processes for preparing the high-thermal-conductivity silicon nitride ceramics, such as isostatic pressing sintering and hot pressed sintering, a tape casting method is combined with liquid silicon penetration forming and nitriding sintering processes, no or little machining is needed, preparation temperature is low, no sintering additive needs to be added, and the influence of a grain boundary on the thermal conductivity of the material is avoided. The thermal conductivity of the prepared silicon nitride ceramics can reach 80-120 Wm<-1>K<-1>.
Method for preparing high-thermal-conductivity silicon nitride ceramics
CHENG LAIFEI (Autor:in) / LI MINGXING (Autor:in) / ZHANG LITONG (Autor:in)
20.01.2016
Patent
Elektronische Ressource
Englisch
IPC:
C04B
Kalk
,
LIME
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