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Grain boundary layer semiconductor ceramic chip oxidizer coating material and preparation method thereof
The invention provides a grain boundary layer semiconductor ceramic chip oxidizer coating material and a preparation method thereof. The coating material is prepared from, by mole ratio, Cu2O 3-9%; B2O3 20-25%, SiO2 48-60%, MnO2 1-4% and La2O3 15-20%, and coating material slurry is prepared by adding a plasticizer and a defoaming agent into ultrafine powder prepared by using a sol-gel method and then performing ball milling on the premise that a PH value is controlled. A Pb-containing doping agent is not used in the coating material, the dielectric constant epsilon r of prepared semiconductor ceramic chips is 26000-35000, a loss value tg delta is 0.4%-1.0%, and the capacitive temperature change rate delta C/C (%) (-55 to 125 DEG C) is within the range of +/-15%. The coating material is uniform and fine in granularity and has a decisive role in the performance of the grain boundary layer semiconductor ceramic chips, the preparation method is simple, and a process is easy to control.
Grain boundary layer semiconductor ceramic chip oxidizer coating material and preparation method thereof
The invention provides a grain boundary layer semiconductor ceramic chip oxidizer coating material and a preparation method thereof. The coating material is prepared from, by mole ratio, Cu2O 3-9%; B2O3 20-25%, SiO2 48-60%, MnO2 1-4% and La2O3 15-20%, and coating material slurry is prepared by adding a plasticizer and a defoaming agent into ultrafine powder prepared by using a sol-gel method and then performing ball milling on the premise that a PH value is controlled. A Pb-containing doping agent is not used in the coating material, the dielectric constant epsilon r of prepared semiconductor ceramic chips is 26000-35000, a loss value tg delta is 0.4%-1.0%, and the capacitive temperature change rate delta C/C (%) (-55 to 125 DEG C) is within the range of +/-15%. The coating material is uniform and fine in granularity and has a decisive role in the performance of the grain boundary layer semiconductor ceramic chips, the preparation method is simple, and a process is easy to control.
Grain boundary layer semiconductor ceramic chip oxidizer coating material and preparation method thereof
ZHONG CHAOWEI (Autor:in) / TAO YU (Autor:in) / TANG BIN (Autor:in)
27.01.2016
Patent
Elektronische Ressource
Englisch
IPC:
C04B
Kalk
,
LIME
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