Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Technology for sealing micropore opening
The invention discloses a technology for sealing a micropore opening. A ZnO nanometer structure is prepared on a Si3N4 substrate with a micrometer pore by utilizing a Au catalysis assisted chemical vapor deposition growth technology, and the purpose of surface sealing is realized. In the hole sealing process, planar deposition is performed from the pore wall to the pore center, the deposition rate of the micropore surface is controlled by controlling the deposition temperature and time, and finally a zinc oxide film is formed. The zinc oxide film comprises a zinc oxide nano-wire layer composed of crosswise-grown zinc oxide nano-wires, nano-sheets or nano-columns, and the formed nanometer material structure is definite and ordered, a high specific surface area can be realized. Si3N4 subjected to hole-sealing processing can be taken as a bearing, wave transmission and heat-protection material, and is applicable to the technical field of semiconductor nanometer materials, and the ZnO nanometer structure with multiple forms is easy to etch, thereby facilitating the subsequent technology for processing.
Technology for sealing micropore opening
The invention discloses a technology for sealing a micropore opening. A ZnO nanometer structure is prepared on a Si3N4 substrate with a micrometer pore by utilizing a Au catalysis assisted chemical vapor deposition growth technology, and the purpose of surface sealing is realized. In the hole sealing process, planar deposition is performed from the pore wall to the pore center, the deposition rate of the micropore surface is controlled by controlling the deposition temperature and time, and finally a zinc oxide film is formed. The zinc oxide film comprises a zinc oxide nano-wire layer composed of crosswise-grown zinc oxide nano-wires, nano-sheets or nano-columns, and the formed nanometer material structure is definite and ordered, a high specific surface area can be realized. Si3N4 subjected to hole-sealing processing can be taken as a bearing, wave transmission and heat-protection material, and is applicable to the technical field of semiconductor nanometer materials, and the ZnO nanometer structure with multiple forms is easy to etch, thereby facilitating the subsequent technology for processing.
Technology for sealing micropore opening
WANG DEQIANG (Autor:in) / ZHAO YUE (Autor:in) / LU WENQIANG (Autor:in) / CUI HONGLIANG (Autor:in) / DU CHUNLEI (Autor:in)
17.02.2016
Patent
Elektronische Ressource
Englisch
IPC:
C04B
Kalk
,
LIME
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