Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
一种Bi2SiO5硅酸铋薄膜材料及其制备方法和应用
本发明公开了一种Bi2SiO5硅酸铋薄膜材料及其制备方法和应用，所述制备方法通过选择乙酰丙酮搭配正硅酸四乙酯，并协同含有Bi的有机盐溶液，制得的硅酸铋前驱体薄膜在特定的温度下烧结，成功制备得到Bi2SiO5硅酸铋薄膜材料。该方法为化学溶液沉积法，不需要真空条件，且烧结温度低，制备过程简单，成本低，制得的Bi2SiO5硅酸铋薄膜材料均匀致密、无杂相生成，具有稳定的介电常数及较小的介电损耗，具有较高的居里温度，具有良好的介电特性，无铅，对环境友好，无毒；能够用于制备介电薄膜电容器，在光电器件等微电子器件及集成电路领域具有重要的应用前景。
The invention discloses a Bi2SiO5 bismuth silicate film material, and a preparation method and application thereof. According to the preparation method, acetylacetone is selected, is combined with silicon tetraacetate, and cooperates with a Bi-containing organic salt solution to prepare a bismuth silicate precursor film, and the prepared bismuth silicate precursor film is sintered at a specific temperature, so that the Bi2SiO5 bismuth silicate film material is successfully prepared. The method is a chemical solution deposition method, does not require vacuum conditions, has a low sintering temperature, and is simple in preparation process and low in cost. The obtained Bi2SiO5 bismuth silicate film material is uniform and dense, has no impurity phase formation, has a stable dielectric constant, a relatively small dielectric loss, a high Curie temperature, good dielectric properties, no lead, friendliness to environment and no toxicity. The Bi2SiO5 bismuth silicate film material can be used to prepare dielectric film capacitors, and has important application prospects in optoelectronic devices and other microelectronic devices and integrated circuit field.
一种Bi2SiO5硅酸铋薄膜材料及其制备方法和应用
本发明公开了一种Bi2SiO5硅酸铋薄膜材料及其制备方法和应用，所述制备方法通过选择乙酰丙酮搭配正硅酸四乙酯，并协同含有Bi的有机盐溶液，制得的硅酸铋前驱体薄膜在特定的温度下烧结，成功制备得到Bi2SiO5硅酸铋薄膜材料。该方法为化学溶液沉积法，不需要真空条件，且烧结温度低，制备过程简单，成本低，制得的Bi2SiO5硅酸铋薄膜材料均匀致密、无杂相生成，具有稳定的介电常数及较小的介电损耗，具有较高的居里温度，具有良好的介电特性，无铅，对环境友好，无毒；能够用于制备介电薄膜电容器，在光电器件等微电子器件及集成电路领域具有重要的应用前景。
The invention discloses a Bi2SiO5 bismuth silicate film material, and a preparation method and application thereof. According to the preparation method, acetylacetone is selected, is combined with silicon tetraacetate, and cooperates with a Bi-containing organic salt solution to prepare a bismuth silicate precursor film, and the prepared bismuth silicate precursor film is sintered at a specific temperature, so that the Bi2SiO5 bismuth silicate film material is successfully prepared. The method is a chemical solution deposition method, does not require vacuum conditions, has a low sintering temperature, and is simple in preparation process and low in cost. The obtained Bi2SiO5 bismuth silicate film material is uniform and dense, has no impurity phase formation, has a stable dielectric constant, a relatively small dielectric loss, a high Curie temperature, good dielectric properties, no lead, friendliness to environment and no toxicity. The Bi2SiO5 bismuth silicate film material can be used to prepare dielectric film capacitors, and has important application prospects in optoelectronic devices and other microelectronic devices and integrated circuit field.
Synthesis of Bi2SiO5 powder by molten salt method
| British Library Online Contents | 2012
A novel method for preparation of pure Bi2SiO5 crystals
| British Library Online Contents | 2012
| British Library Online Contents | 2011
| British Library Online Contents | 2019
| British Library Online Contents | 2012