Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Preparation method of silicon carbide ceramic
The invention relates to the technical field of ceramics, particularly to a preparation method of a silicon carbide ceramic. The preparation method comprises the following steps: preparing a main material, preparing a water-based silicon carbide slurry, carrying out spray granulation, obtaining a silicon carbide billet, and sintering to obtain the silicon carbide ceramic, wherein the main materialcomprises the following components in parts by weight: 80-92 parts of silicon carbide, 2-4 parts of lanthanum oxide, 1-3 parts of fumed silica, 1-2 parts of aluminum oxide and 0.5-1 part of aluminumdiboride. The sintering temperature of the silicon carbide ceramic is reduced to 1750 DEG C at least, and the sintering temperature is low.
本发明涉及陶瓷技术领域，具体涉及一种碳化硅陶瓷的制备方法，包括以下步骤：制备主料、制备水基碳化硅浆料、喷雾造粒、得到碳化硅素坯、烧结得到碳化硅陶瓷，其中，主料以重量份计，将碳化硅80～92份，氧化镧2～4份，气相白炭黑1～3份，氧化铝1～2份，二硼化铝0.5～1份。碳化硅陶瓷的烧结温度下降到最低为1750℃，烧结温度相对较低。
Preparation method of silicon carbide ceramic
The invention relates to the technical field of ceramics, particularly to a preparation method of a silicon carbide ceramic. The preparation method comprises the following steps: preparing a main material, preparing a water-based silicon carbide slurry, carrying out spray granulation, obtaining a silicon carbide billet, and sintering to obtain the silicon carbide ceramic, wherein the main materialcomprises the following components in parts by weight: 80-92 parts of silicon carbide, 2-4 parts of lanthanum oxide, 1-3 parts of fumed silica, 1-2 parts of aluminum oxide and 0.5-1 part of aluminumdiboride. The sintering temperature of the silicon carbide ceramic is reduced to 1750 DEG C at least, and the sintering temperature is low.
本发明涉及陶瓷技术领域，具体涉及一种碳化硅陶瓷的制备方法，包括以下步骤：制备主料、制备水基碳化硅浆料、喷雾造粒、得到碳化硅素坯、烧结得到碳化硅陶瓷，其中，主料以重量份计，将碳化硅80～92份，氧化镧2～4份，气相白炭黑1～3份，氧化铝1～2份，二硼化铝0.5～1份。碳化硅陶瓷的烧结温度下降到最低为1750℃，烧结温度相对较低。
Preparation method of silicon carbide ceramic
一种碳化硅陶瓷的制备方法
LI QIUNAN (Autor:in) / LIU KAI (Autor:in) / WANG LIGONG (Autor:in) / WANG HUI (Autor:in) / ZHAO TAO (Autor:in) / HU ZHENGKUN (Autor:in)
12.05.2020
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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