Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
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Preparation method of spinel phase p-type nickel ferrite semiconductor oxide film
The invention discloses a preparation method of a spinel phase p-type nickel ferrite semiconductor oxide film, and relates to a preparation method of a p-type semiconductor oxide film. The method comprises the steps: firstly, cleaning a substrate to obtain the cleaned substrate; and secondly, placing the cleaned substrate on a tray, pumping a growth chamber to a background vacuum by using a mechanical pump and a molecular pump, heating the substrate to 530-580 DEG C, taking a NiFe2O4 ceramic material as a target material, adjusting a high-energy pulse laser, controlling the output of the pulselaser to be 100-250 mJ, performing pulse laser deposition on the film and obtaining the spinel phase p-type semiconductor oxide film, wherein the growth oxygen partial pressure in the film depositionprocess is 0.1-20 mTorr. A pulse laser deposition method is adopted to grow the NiFe2O4 semiconductor oxide film, and the tetrahedral Fe-deficient NiFe2O4 film obtained under a low oxygen partial pressure is a p-type semiconductor material.
尖晶石相p型铁酸镍半导体氧化物薄膜的制备方法，本发明涉及一种p型半导体性氧化物薄膜的制备方法，制备方法：一、清洗衬底，得到清洗处理后的衬底；二、将清洗处理后的衬底放在托盘上，利用机械泵和分子泵将生长室抽至本底真空，衬底加热到530～580℃，以NiFeO陶瓷材料为靶材，调整高能脉冲激光器，控制脉冲激光输出为能量100～250mJ进行脉冲激光沉积薄膜，薄膜沉积过程中生长氧分压为0.1～20mTorr，得到尖晶石相p型半导体性氧化物薄膜。本发明采用脉冲激光沉积方法生长NiFeO半导体氧化物薄膜，在较低氧分压下得到的四面体Fe缺失的NiFeO薄膜是一种p型半导体材料。
Preparation method of spinel phase p-type nickel ferrite semiconductor oxide film
The invention discloses a preparation method of a spinel phase p-type nickel ferrite semiconductor oxide film, and relates to a preparation method of a p-type semiconductor oxide film. The method comprises the steps: firstly, cleaning a substrate to obtain the cleaned substrate; and secondly, placing the cleaned substrate on a tray, pumping a growth chamber to a background vacuum by using a mechanical pump and a molecular pump, heating the substrate to 530-580 DEG C, taking a NiFe2O4 ceramic material as a target material, adjusting a high-energy pulse laser, controlling the output of the pulselaser to be 100-250 mJ, performing pulse laser deposition on the film and obtaining the spinel phase p-type semiconductor oxide film, wherein the growth oxygen partial pressure in the film depositionprocess is 0.1-20 mTorr. A pulse laser deposition method is adopted to grow the NiFe2O4 semiconductor oxide film, and the tetrahedral Fe-deficient NiFe2O4 film obtained under a low oxygen partial pressure is a p-type semiconductor material.
尖晶石相p型铁酸镍半导体氧化物薄膜的制备方法，本发明涉及一种p型半导体性氧化物薄膜的制备方法，制备方法：一、清洗衬底，得到清洗处理后的衬底；二、将清洗处理后的衬底放在托盘上，利用机械泵和分子泵将生长室抽至本底真空，衬底加热到530～580℃，以NiFeO陶瓷材料为靶材，调整高能脉冲激光器，控制脉冲激光输出为能量100～250mJ进行脉冲激光沉积薄膜，薄膜沉积过程中生长氧分压为0.1～20mTorr，得到尖晶石相p型半导体性氧化物薄膜。本发明采用脉冲激光沉积方法生长NiFeO半导体氧化物薄膜，在较低氧分压下得到的四面体Fe缺失的NiFeO薄膜是一种p型半导体材料。
Preparation method of spinel phase p-type nickel ferrite semiconductor oxide film
尖晶石相p型铁酸镍半导体氧化物薄膜的制备方法
WANG XIANJIE (Autor:in) / SONG BINGQIAN (Autor:in) / SUI YU (Autor:in) / SONG BO (Autor:in)
12.06.2020
Patent
Elektronische Ressource
Chinesisch
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