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Method for preparing compact polycrystalline diamond and boron-doped polycrystalline diamond
The invention provides a method for preparing compact polycrystalline diamond and boron-doped polycrystalline diamond, and relates to the technical field of high-performance materials. The method comprises the steps: mixing carbon nano onion with a diamond core with a boron source to obtain a mixture, wherein the boron source is elemental boron or boron oxide; then carrying out primary prepressingforming and secondary high-pressure prepressing forming on the mixture in sequence, and thus obtaining a preformed material; and carrying out high-temperature and high-pressure sintering on the preformed material to obtain a compact boron-doped polycrystalline diamond block, wherein the conditions of high-temperature and high-pressure sintering comprise that the sintering temperature is 1200-2000DEG C, the sintering pressure is 5-10 GPa, and the heat and pressure maintaining time is 1-200 min. The carbon nano onion with the diamond core is used as a carbon raw material, and the boron elementis doped, so that the synthesis condition of the polycrystalline diamond can be greatly reduced, and the method is suitable for industrial production; and the performance of the polycrystalline diamond is improved.
本发明提供了一种制备致密聚晶金刚石的方法和一种硼掺杂聚晶金刚石,涉及高性能材料技术领域。本发明将具有金刚石核芯的碳纳米葱与硼源混合,得到混合料;所述硼源为单质硼或氧化硼;然后将所述混合料依次进行初步预压成型和二次高压预压成型,得到预成型料;再将所述预成型料进行高温高压烧结,得到致密硼掺杂聚晶金刚石块体;所述高温高压烧结的条件包括:烧结温度为1200~2000℃,烧结压力为5~10GPa,保温保压时间为1~200min。本发明以具有金刚石核芯的碳纳米葱作为碳原料,掺加硼元素,能够较大程度地降低聚晶金刚石的合成条件,适合工业化生产;且提高了聚晶金刚石的性能。
Method for preparing compact polycrystalline diamond and boron-doped polycrystalline diamond
The invention provides a method for preparing compact polycrystalline diamond and boron-doped polycrystalline diamond, and relates to the technical field of high-performance materials. The method comprises the steps: mixing carbon nano onion with a diamond core with a boron source to obtain a mixture, wherein the boron source is elemental boron or boron oxide; then carrying out primary prepressingforming and secondary high-pressure prepressing forming on the mixture in sequence, and thus obtaining a preformed material; and carrying out high-temperature and high-pressure sintering on the preformed material to obtain a compact boron-doped polycrystalline diamond block, wherein the conditions of high-temperature and high-pressure sintering comprise that the sintering temperature is 1200-2000DEG C, the sintering pressure is 5-10 GPa, and the heat and pressure maintaining time is 1-200 min. The carbon nano onion with the diamond core is used as a carbon raw material, and the boron elementis doped, so that the synthesis condition of the polycrystalline diamond can be greatly reduced, and the method is suitable for industrial production; and the performance of the polycrystalline diamond is improved.
本发明提供了一种制备致密聚晶金刚石的方法和一种硼掺杂聚晶金刚石,涉及高性能材料技术领域。本发明将具有金刚石核芯的碳纳米葱与硼源混合,得到混合料;所述硼源为单质硼或氧化硼;然后将所述混合料依次进行初步预压成型和二次高压预压成型,得到预成型料;再将所述预成型料进行高温高压烧结,得到致密硼掺杂聚晶金刚石块体;所述高温高压烧结的条件包括:烧结温度为1200~2000℃,烧结压力为5~10GPa,保温保压时间为1~200min。本发明以具有金刚石核芯的碳纳米葱作为碳原料,掺加硼元素,能够较大程度地降低聚晶金刚石的合成条件,适合工业化生产;且提高了聚晶金刚石的性能。
Method for preparing compact polycrystalline diamond and boron-doped polycrystalline diamond
一种制备致密聚晶金刚石的方法和一种硼掺杂聚晶金刚石
WANG MINGZHI (Autor:in) / TANG HU (Autor:in) / YUAN XIAOHONG (Autor:in)
17.07.2020
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
POLYCRYSTALLINE DIAMOND COMPACT AND METHOD OF MAKING A POLYCRYSTALLINE DIAMOND COMPACT
Europäisches Patentamt | 2016
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