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Aluminum nitride ceramic with high thermal conductivity and high strength and preparation method thereof
The invention belongs to the technical field of ceramic materials, and particularly relates to preparation of pressureless sintering high-thermal-conductivity and high-strength aluminum nitride ceramic. The aluminum nitride ceramic is prepared by carrying out oxidation treatment on an aluminum nitride sintered body obtained by pressureless sintering, a compact oxide layer with a proper thickness can be formed on the surface of the aluminum nitride sintered body through proper oxidation treatment, the residual compressive stress in an aluminum nitride matrix can be increased through the formation of the oxide layer, and the change of the residual compressive stress is beneficial to preventing expansion of cracks in the aluminum nitride ceramic and reducing the contact thermal resistance ofan aluminum nitride grain boundary. According to the aluminum nitride ceramic provided by the invention, after oxidation treatment, the thermal conductivity can be improved to 185-210 W/(m.K), the bending strength is improved to 390-460 MPa, the dielectric constant is 9-10, the dielectric loss is 0.8*10<-3> to 2.4*10<-3>, and the application requirements of industries such as semiconductor devicesand integrated circuits can be met.
本发明属于陶瓷材料技术领域，更具体的，涉及一种无压烧结高热导率高强度的氮化铝陶瓷的制备。本发明通过将无压烧结得到的氮化铝烧结体进行氧化处理制备氮化铝陶瓷，适当的氧化处理可以在氮化铝烧结体表面形成厚度适当且致密的氧化层，氧化层的形成可以增加氮化铝基体内的残余压应力，残余应力的改变有助于阻止氮化铝陶瓷内裂纹的扩展并降低氮化铝晶界的接触热阻。本发明所提供的氮化铝陶瓷，在氧化处理后可使其热导率提高至185～210W/(m·K)，抗弯强度提高至390～460MPa，介电常数为9～10，介电损耗为0.8×10～2.4×10，可以满足半导体器件和集成电路等产业的应用要求。
Aluminum nitride ceramic with high thermal conductivity and high strength and preparation method thereof
The invention belongs to the technical field of ceramic materials, and particularly relates to preparation of pressureless sintering high-thermal-conductivity and high-strength aluminum nitride ceramic. The aluminum nitride ceramic is prepared by carrying out oxidation treatment on an aluminum nitride sintered body obtained by pressureless sintering, a compact oxide layer with a proper thickness can be formed on the surface of the aluminum nitride sintered body through proper oxidation treatment, the residual compressive stress in an aluminum nitride matrix can be increased through the formation of the oxide layer, and the change of the residual compressive stress is beneficial to preventing expansion of cracks in the aluminum nitride ceramic and reducing the contact thermal resistance ofan aluminum nitride grain boundary. According to the aluminum nitride ceramic provided by the invention, after oxidation treatment, the thermal conductivity can be improved to 185-210 W/(m.K), the bending strength is improved to 390-460 MPa, the dielectric constant is 9-10, the dielectric loss is 0.8*10<-3> to 2.4*10<-3>, and the application requirements of industries such as semiconductor devicesand integrated circuits can be met.
本发明属于陶瓷材料技术领域，更具体的，涉及一种无压烧结高热导率高强度的氮化铝陶瓷的制备。本发明通过将无压烧结得到的氮化铝烧结体进行氧化处理制备氮化铝陶瓷，适当的氧化处理可以在氮化铝烧结体表面形成厚度适当且致密的氧化层，氧化层的形成可以增加氮化铝基体内的残余压应力，残余应力的改变有助于阻止氮化铝陶瓷内裂纹的扩展并降低氮化铝晶界的接触热阻。本发明所提供的氮化铝陶瓷，在氧化处理后可使其热导率提高至185～210W/(m·K)，抗弯强度提高至390～460MPa，介电常数为9～10，介电损耗为0.8×10～2.4×10，可以满足半导体器件和集成电路等产业的应用要求。
Aluminum nitride ceramic with high thermal conductivity and high strength and preparation method thereof
一种兼具高热导率和高强度的氮化铝陶瓷及其制备方法
WANG XIAOHONG (Autor:in) / JIANG HAI (Autor:in) / LYU WENZHONG (Autor:in) / FAN GUIFEN (Autor:in) / LEI WEN (Autor:in) / FU MING (Autor:in) / WANG XIAOCHUAN (Autor:in) / LIANG FEI (Autor:in)
04.08.2020
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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