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High-energy-storage-density low-titanium lead zirconate-based antiferroelectric ceramic and preparation method thereof
The invention discloses a high-energy-storage-density low-titanium lead zirconate-based antiferroelectric ceramic and a preparation method thereof; the chemical composition general formula of the low-titanium lead zirconate-based antiferroelectric ceramic material is (Pb[0.94]La[0.04])(Zr[1-x-y]Sn[x]Ti[y])O[3], wherein 0<=x<=0.5, and 0<=y<=0.03. Different Zr/Sn/Ti ratios are regulated and controlled, so the low-titanium lead zirconate-based antiferroelectric ceramic material prepared by virtue of a tape casting process can be sintered in a temperature range of 1100-1300 DEG C; the prepared low-titanium lead zirconate-based antiferroelectric ceramic material has the characteristics of high phase-change electric field, high breakdown electric field and high polarization strength at room temperature, has quite high energy storage density and energy storage efficiency, makes up the technical defects of low phase change electric field, low breakdown electric field and low energy storage density in a traditional method for preparing the lead zirconate-based antiferroelectric ceramic material, and widens the research and development and application of the lead zirconate-based antiferroelectric ceramic material in the field of high-power energy storage materials.
本发明公开了一种高储能密度低钛锆酸铅基反铁电陶瓷及其制备方法，该低钛锆酸铅基反铁电陶瓷材料的化学组成通式为：(PbLa)(ZrSnTi)O，其中，0≤x≤0.5，0≤y≤0.03。本发明通过调控不同的Zr/Sn/Ti比例，并借助流延成型的工艺制备得到的低钛锆酸铅基反铁电陶瓷材料可以在1100‑1300℃温度范围内烧结，且本发明制备得到的低钛锆酸铅基反铁电陶瓷材料在室温条件下兼备高相变电场、高击穿电场、高极化强度的特点，并能够具有非常高的储能密度和储能效率，弥补了传统法制备锆酸铅基反铁电陶瓷材料相变电场低、击穿电场低、储能密度低的技术缺陷，拓宽了其在高功率储能材料领域的研发和应用。
High-energy-storage-density low-titanium lead zirconate-based antiferroelectric ceramic and preparation method thereof
The invention discloses a high-energy-storage-density low-titanium lead zirconate-based antiferroelectric ceramic and a preparation method thereof; the chemical composition general formula of the low-titanium lead zirconate-based antiferroelectric ceramic material is (Pb[0.94]La[0.04])(Zr[1-x-y]Sn[x]Ti[y])O[3], wherein 0<=x<=0.5, and 0<=y<=0.03. Different Zr/Sn/Ti ratios are regulated and controlled, so the low-titanium lead zirconate-based antiferroelectric ceramic material prepared by virtue of a tape casting process can be sintered in a temperature range of 1100-1300 DEG C; the prepared low-titanium lead zirconate-based antiferroelectric ceramic material has the characteristics of high phase-change electric field, high breakdown electric field and high polarization strength at room temperature, has quite high energy storage density and energy storage efficiency, makes up the technical defects of low phase change electric field, low breakdown electric field and low energy storage density in a traditional method for preparing the lead zirconate-based antiferroelectric ceramic material, and widens the research and development and application of the lead zirconate-based antiferroelectric ceramic material in the field of high-power energy storage materials.
本发明公开了一种高储能密度低钛锆酸铅基反铁电陶瓷及其制备方法，该低钛锆酸铅基反铁电陶瓷材料的化学组成通式为：(PbLa)(ZrSnTi)O，其中，0≤x≤0.5，0≤y≤0.03。本发明通过调控不同的Zr/Sn/Ti比例，并借助流延成型的工艺制备得到的低钛锆酸铅基反铁电陶瓷材料可以在1100‑1300℃温度范围内烧结，且本发明制备得到的低钛锆酸铅基反铁电陶瓷材料在室温条件下兼备高相变电场、高击穿电场、高极化强度的特点，并能够具有非常高的储能密度和储能效率，弥补了传统法制备锆酸铅基反铁电陶瓷材料相变电场低、击穿电场低、储能密度低的技术缺陷，拓宽了其在高功率储能材料领域的研发和应用。
High-energy-storage-density low-titanium lead zirconate-based antiferroelectric ceramic and preparation method thereof
高储能密度低钛锆酸铅基反铁电陶瓷及其制备方法
HAO XIHONG (Autor:in) / MENG XIANGJUN (Autor:in) / LI YONG (Autor:in) / ZHAO YE (Autor:in)
18.08.2020
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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