Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
The invention provides a low-resistivity niobium pentoxide hot-pressed target material and a preparation method thereof, and belongs to the technical field of coating materials. Vacuum presintering iscarried out on a mixture of niobium pentoxide powder and niobium powder, part of niobium pentoxide reacts with niobium to generate niobium monoxide and niobium dioxide, meanwhile, niobium pentoxide generates niobium dioxide in a vacuum oxygen loss state, niobium oxide containing niobium monoxide is obtained, and then hot-pressed sintering is carried out to obtain the niobium pentoxide hot-pressedtarget material with high density. The niobium pentoxide hot-pressed target material contains a niobium monoxide conductor and a niobium dioxide semiconductor, so that the resistivity of the target material is effectively reduced, and the conductivity is improved.
本发明提供了一种低电阻率五氧化二铌热压靶材及其制备方法，属于镀膜材料技术领域。本发明将五氧化二铌粉和铌粉的混合物进行真空预烧结，部分五氧化二铌与铌反应生成一氧化铌和二氧化铌，同时五氧化二铌在真空失氧状态下，生成二氧化铌，得到含一氧化铌的铌的氧化物，然后进行热压烧结，得到较高密度的五氧化二铌热压靶材。本发明所得五氧化二铌热压靶材中含有一氧化铌导体和二氧化铌半导体，有效降低了靶材的电阻率，提高了导电性。
The invention provides a low-resistivity niobium pentoxide hot-pressed target material and a preparation method thereof, and belongs to the technical field of coating materials. Vacuum presintering iscarried out on a mixture of niobium pentoxide powder and niobium powder, part of niobium pentoxide reacts with niobium to generate niobium monoxide and niobium dioxide, meanwhile, niobium pentoxide generates niobium dioxide in a vacuum oxygen loss state, niobium oxide containing niobium monoxide is obtained, and then hot-pressed sintering is carried out to obtain the niobium pentoxide hot-pressedtarget material with high density. The niobium pentoxide hot-pressed target material contains a niobium monoxide conductor and a niobium dioxide semiconductor, so that the resistivity of the target material is effectively reduced, and the conductivity is improved.
本发明提供了一种低电阻率五氧化二铌热压靶材及其制备方法，属于镀膜材料技术领域。本发明将五氧化二铌粉和铌粉的混合物进行真空预烧结，部分五氧化二铌与铌反应生成一氧化铌和二氧化铌，同时五氧化二铌在真空失氧状态下，生成二氧化铌，得到含一氧化铌的铌的氧化物，然后进行热压烧结，得到较高密度的五氧化二铌热压靶材。本发明所得五氧化二铌热压靶材中含有一氧化铌导体和二氧化铌半导体，有效降低了靶材的电阻率，提高了导电性。
Low-resistivity niobium pentoxide hot-pressed target material and preparation method thereof
一种低电阻率五氧化二铌热压靶材及其制备方法
01.09.2020
Patent
Elektronische Ressource
Chinesisch
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