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Antiferroelectric material and preparation method thereof, and capacitor containing antiferroelectric material
The invention discloses an antiferroelectric material and a preparation method thereof, and a capacitor containing the antiferroelectric material. The antiferroelectric material includes an antiferroelectric body represented by a general formula (Pb<0.94>La<0.04>)(Zr<1-x-y>SnTi)O<3>, where x is greater than or equal to 0.3 and smaller than or equal to 0.5, and y is greater than or equal to 0.3 and smaller than or equal to 0.1. The antiferroelectric material can be used for manufacturing the energy storage capacitor. According to the lead lanthanum zirconate titanate stannate antiferroelectric thick-film capacitor prepared by a tape casting method disclosed by the invention, the ultrahigh energy storage efficiency of 90-95% can be achieved, and the capacitor also has relatively strongbreakdown resistance and high energy storage density, so a solid foundation is laid for researching and developing a dielectric energy storage capacitor with excellent energy storage performance; andthe capacitor has a very good application value.
本发明公开了一种反铁电材料及其制备方法和含有其的电容器，该反铁电材料包括用通式(PbLa)(ZrSnTi)O表示的反铁电体，其中，x的范围为0.3≤x≤0.5，y的范围为0≤y≤0.1，该反铁电材料可以用于制作储能电容器。本发明通过流延法所制备得到的锆钛锡酸铅镧反铁电厚膜电容器不仅能够达到90％～95％的超高储能效率，还具有较强的耐击穿性能，储能密度高，这为研发具有优异储能性能的介质储能电容器奠定了坚实的基础，具有很好的应用价值。
Antiferroelectric material and preparation method thereof, and capacitor containing antiferroelectric material
The invention discloses an antiferroelectric material and a preparation method thereof, and a capacitor containing the antiferroelectric material. The antiferroelectric material includes an antiferroelectric body represented by a general formula (Pb<0.94>La<0.04>)(Zr<1-x-y>SnTi)O<3>, where x is greater than or equal to 0.3 and smaller than or equal to 0.5, and y is greater than or equal to 0.3 and smaller than or equal to 0.1. The antiferroelectric material can be used for manufacturing the energy storage capacitor. According to the lead lanthanum zirconate titanate stannate antiferroelectric thick-film capacitor prepared by a tape casting method disclosed by the invention, the ultrahigh energy storage efficiency of 90-95% can be achieved, and the capacitor also has relatively strongbreakdown resistance and high energy storage density, so a solid foundation is laid for researching and developing a dielectric energy storage capacitor with excellent energy storage performance; andthe capacitor has a very good application value.
本发明公开了一种反铁电材料及其制备方法和含有其的电容器，该反铁电材料包括用通式(PbLa)(ZrSnTi)O表示的反铁电体，其中，x的范围为0.3≤x≤0.5，y的范围为0≤y≤0.1，该反铁电材料可以用于制作储能电容器。本发明通过流延法所制备得到的锆钛锡酸铅镧反铁电厚膜电容器不仅能够达到90％～95％的超高储能效率，还具有较强的耐击穿性能，储能密度高，这为研发具有优异储能性能的介质储能电容器奠定了坚实的基础，具有很好的应用价值。
Antiferroelectric material and preparation method thereof, and capacitor containing antiferroelectric material
一种反铁电材料及其制备方法和含有其的电容器
HAO XIHONG (Autor:in) / MENG XIANGJUN (Autor:in) / ZHAO YE (Autor:in) / SUN NINGNING (Autor:in) / LI YONG (Autor:in)
29.09.2020
Patent
Elektronische Ressource
Chinesisch
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