Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
High-density boron carbide ceramic material and pressureless sintering preparation method thereof
The invention discloses a high-density boron carbide ceramic material and a pressureless sintering preparation method thereof. The high-density boron carbide ceramic material is prepared from, by mass, 2%-8% of chromium disilicide, 4%-10% of silicon carbide, 0-2% of aluminum, 3%-8% of polyimide powder, 0.5%-2.5% of carbon black and the balance boron carbide. In order to improve the density of theboron carbide ceramic, a metal simple substance with good wettability with boron carbide or a compound of the metal simple substance is often added. Chromium disilicide and silicon carbide are added as sintering aids to improve the mechanical properties. Chromium disilicide and boron carbide can form a eutectic liquid phase to realize liquid phase sintering, so that the density of boron carbide can be remarkably improved. The silicon carbide can also be pinned at a boron carbide grain boundary to hinder grain growth, and the mechanical property of the silicon carbide is improved. And the two sintering aids serving as second-phase particles are well mixed with the boron carbide matrix, so that the wettability is better, and the strength of the bonding surface of the ceramic material can beimproved.
本发明公开了一种高致密碳化硼陶瓷材料及其无压烧结的制备方法,其原料按照质量百分比,由以下组份组成:二硅化铬2~8%,碳化硅4~10%,铝0~2%,聚酰亚胺粉3~8%,炭黑0.5~2.5%,余量为碳化硼。本发明为了提高碳化硼陶瓷的致密度,常添加与碳化硼有较好润湿性的金属单质或其化合物。本发明采用加入二硅化铬和碳化硅作烧结助剂提高其力学性能。二硅化铬可以与碳化硼形成共晶液相实现液相烧结,可显著提升碳化硼致密度。碳化硅还可钉扎在碳化硼晶界处阻碍晶粒长大,提升其力学性能。两种烧结助剂作为第二相粒子与碳化硼基体混合良好,润湿性较好,可以提高陶瓷材料结合面的强度。
High-density boron carbide ceramic material and pressureless sintering preparation method thereof
The invention discloses a high-density boron carbide ceramic material and a pressureless sintering preparation method thereof. The high-density boron carbide ceramic material is prepared from, by mass, 2%-8% of chromium disilicide, 4%-10% of silicon carbide, 0-2% of aluminum, 3%-8% of polyimide powder, 0.5%-2.5% of carbon black and the balance boron carbide. In order to improve the density of theboron carbide ceramic, a metal simple substance with good wettability with boron carbide or a compound of the metal simple substance is often added. Chromium disilicide and silicon carbide are added as sintering aids to improve the mechanical properties. Chromium disilicide and boron carbide can form a eutectic liquid phase to realize liquid phase sintering, so that the density of boron carbide can be remarkably improved. The silicon carbide can also be pinned at a boron carbide grain boundary to hinder grain growth, and the mechanical property of the silicon carbide is improved. And the two sintering aids serving as second-phase particles are well mixed with the boron carbide matrix, so that the wettability is better, and the strength of the bonding surface of the ceramic material can beimproved.
本发明公开了一种高致密碳化硼陶瓷材料及其无压烧结的制备方法,其原料按照质量百分比,由以下组份组成:二硅化铬2~8%,碳化硅4~10%,铝0~2%,聚酰亚胺粉3~8%,炭黑0.5~2.5%,余量为碳化硼。本发明为了提高碳化硼陶瓷的致密度,常添加与碳化硼有较好润湿性的金属单质或其化合物。本发明采用加入二硅化铬和碳化硅作烧结助剂提高其力学性能。二硅化铬可以与碳化硼形成共晶液相实现液相烧结,可显著提升碳化硼致密度。碳化硅还可钉扎在碳化硼晶界处阻碍晶粒长大,提升其力学性能。两种烧结助剂作为第二相粒子与碳化硼基体混合良好,润湿性较好,可以提高陶瓷材料结合面的强度。
High-density boron carbide ceramic material and pressureless sintering preparation method thereof
一种高致密碳化硼陶瓷材料及其无压烧结的制备方法
LI RUIDI (Autor:in) / YUAN TIECHUI (Autor:in) / ZOU LIANG (Autor:in) / ZHOU ZHIHUI (Autor:in) / ZHANG MEI (Autor:in) / YAN YACHAO (Autor:in)
27.10.2020
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
Boron carbide ceramic pressureless sintering preparation process
Europäisches Patentamt | 2021
|Pressureless sintering preparation method for boron carbide ceramic
Europäisches Patentamt | 2016
|Boron carbide ceramic pressureless sintering process and device
Europäisches Patentamt | 2020
|Coarse-grained powder based pressureless sintering boron carbide ceramic preparation method
Europäisches Patentamt | 2015
|Pressureless sintered boron carbide bulletproof ceramic and preparation method thereof
Europäisches Patentamt | 2021
|