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Wide-temperature-range linear dielectric ceramic material and preparation method thereof
The invention provides a wide-temperature-range linear dielectric ceramic material and a preparation method thereof. The chemical formula of the wide-temperature-range linear dielectric ceramic material is (1-x)Ba(Zr0.15Ti0.85)O3-xBi(Zn0.5Sn0.5)O3, x is the molar percentage of the doping amount of Bi (Zn0.5Sn0.5)O3 ionic compound, and x is greater than or equal to 0.06 and less than or equal to 0.1. According to the preparation method, Bi<2+>, Zn<2+> and Sn<2+> are doped into a Ba(Zr0.15Ti0.85)O3 matrix ceramic material, the relative dielectric constant of the ceramic is between 600 and 800, and the relative dielectric constant change rate of the ceramic is kept to be lower than 20% at the frequency of 1-100 kHz at the temperature ranging from -50 DEG C to 150 DEG C, the dielectric loss ofthe ceramic is extremely low (0.1<=), the stability of the ceramic is higher than that of an existing commercial energy storage ceramic capacitor, and the performance of the ceramic is stable under the high-voltage 100 kV/cm electric field condition (the energy storage efficiency is kept to be 95%). Compared with a material modified by a previous similar method, the material prepared by the preparation method disclosed by the invention is more excellent in applicability, and can ensure energy storage efficiency under high-pressure, high-temperature and low-temperature conditions.
本发明提供了一种宽温域的线性电介质陶瓷材料及其制备方法，化学式为(1‑x)Ba(Zr0.15Ti0.85)O3‑xBi(Zn0.5Sn0.5)O3，其中x为Bi(Zn0.5Sn0.5)O3离子化合物的掺杂量的摩尔百分比，0.06≤x≤0.1。本发明将Bi2+、Zn2+、Sn2+掺杂在Ba(Zr0.15Ti0.85)O3基体陶瓷材料中，其相对介电常数在600～800之间，且在‑50℃到150℃，1～100kHz频率下保持低于20％的相对介电常数变化率，极低的介电损耗(0.1≤)，稳定性高于现有商用储能陶瓷电容，并且在高电压100kV/cm电场条件下性能稳定(储能效率保持在95％)。通过与之前的类似方法进行改性的材料进行对比，发现本发明所制备的材料适用性能更加优异，能够在高压，高温，低温条件下保证储能效率。
Wide-temperature-range linear dielectric ceramic material and preparation method thereof
The invention provides a wide-temperature-range linear dielectric ceramic material and a preparation method thereof. The chemical formula of the wide-temperature-range linear dielectric ceramic material is (1-x)Ba(Zr0.15Ti0.85)O3-xBi(Zn0.5Sn0.5)O3, x is the molar percentage of the doping amount of Bi (Zn0.5Sn0.5)O3 ionic compound, and x is greater than or equal to 0.06 and less than or equal to 0.1. According to the preparation method, Bi<2+>, Zn<2+> and Sn<2+> are doped into a Ba(Zr0.15Ti0.85)O3 matrix ceramic material, the relative dielectric constant of the ceramic is between 600 and 800, and the relative dielectric constant change rate of the ceramic is kept to be lower than 20% at the frequency of 1-100 kHz at the temperature ranging from -50 DEG C to 150 DEG C, the dielectric loss ofthe ceramic is extremely low (0.1<=), the stability of the ceramic is higher than that of an existing commercial energy storage ceramic capacitor, and the performance of the ceramic is stable under the high-voltage 100 kV/cm electric field condition (the energy storage efficiency is kept to be 95%). Compared with a material modified by a previous similar method, the material prepared by the preparation method disclosed by the invention is more excellent in applicability, and can ensure energy storage efficiency under high-pressure, high-temperature and low-temperature conditions.
本发明提供了一种宽温域的线性电介质陶瓷材料及其制备方法，化学式为(1‑x)Ba(Zr0.15Ti0.85)O3‑xBi(Zn0.5Sn0.5)O3，其中x为Bi(Zn0.5Sn0.5)O3离子化合物的掺杂量的摩尔百分比，0.06≤x≤0.1。本发明将Bi2+、Zn2+、Sn2+掺杂在Ba(Zr0.15Ti0.85)O3基体陶瓷材料中，其相对介电常数在600～800之间，且在‑50℃到150℃，1～100kHz频率下保持低于20％的相对介电常数变化率，极低的介电损耗(0.1≤)，稳定性高于现有商用储能陶瓷电容，并且在高电压100kV/cm电场条件下性能稳定(储能效率保持在95％)。通过与之前的类似方法进行改性的材料进行对比，发现本发明所制备的材料适用性能更加优异，能够在高压，高温，低温条件下保证储能效率。
Wide-temperature-range linear dielectric ceramic material and preparation method thereof
一种宽温域的线性电介质陶瓷材料及其制备方法
LIN XIONGWEI (Autor:in) / LU SHENGGUO (Autor:in) / ZHAO XIAOBO (Autor:in) / ZHOU LEI (Autor:in) / YAO YINGBANG (Autor:in) / TAO TAO (Autor:in) / LIANG BO (Autor:in)
06.11.2020
Patent
Elektronische Ressource
Chinesisch
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