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Preparation method of CTLA microwave dielectric material based on reaction sintering
The invention discloses a preparation method of a CTLA microwave dielectric material based on reaction sintering, which comprises the following steps: proportioning CaCO3, La2O3, Al2O3, TiO2 and CeO2with the purity of more than or equal to 99% as main raw materials according to 0.675CaTiO3-0.325 LaAlO3 and 0.5 wt% CeO2, carrying out wet ball-milling mixing on the materials for 4 hours by using ethanol as a ball-milling medium, conducting drying, conducting pressing forming after drying, and sintering the ceramic material at 1500-1600 DEG C for 6 hours. According to the microwave dielectric ceramic prepared by reaction sintering, the sintering temperature is 1500-1600 DEG C, the dielectric constant is moderate (41.1-47.0), the Q*f value is high (25700-47800 GHz), the resonant frequency temperature coefficient ([tau]f) is close to zero, the process is simple, and the microwave dielectric ceramic can be used for manufacturing microwave devices such as chip resonators, antennas and filters.
本发明公开了一种基于反应烧结的CTLA微波介质材料制备方法，该方法为：将纯度≥99%的CaCO3、La2O3、Al2O3、TiO2和CeO2为主要原料，按0.675CaTiO3‑0.325LaAlO3+0.5%wtCeO2配料，之后将物料湿式球磨混合4h，以乙醇为球磨介质，干燥后压制成型，最后将瓷料在1500~1600℃下烧结6小时。本发明采用反应烧结制备的微波介质陶瓷，其烧结温度处于1500~1600℃，介电常数适中（41.1~47.0），Q×f值高（25700~47800 GHz），谐振频率温度系数（τf）接近零且工艺简单，可用于片式谐振器、天线、滤波器等微波器件的制造。
Preparation method of CTLA microwave dielectric material based on reaction sintering
The invention discloses a preparation method of a CTLA microwave dielectric material based on reaction sintering, which comprises the following steps: proportioning CaCO3, La2O3, Al2O3, TiO2 and CeO2with the purity of more than or equal to 99% as main raw materials according to 0.675CaTiO3-0.325 LaAlO3 and 0.5 wt% CeO2, carrying out wet ball-milling mixing on the materials for 4 hours by using ethanol as a ball-milling medium, conducting drying, conducting pressing forming after drying, and sintering the ceramic material at 1500-1600 DEG C for 6 hours. According to the microwave dielectric ceramic prepared by reaction sintering, the sintering temperature is 1500-1600 DEG C, the dielectric constant is moderate (41.1-47.0), the Q*f value is high (25700-47800 GHz), the resonant frequency temperature coefficient ([tau]f) is close to zero, the process is simple, and the microwave dielectric ceramic can be used for manufacturing microwave devices such as chip resonators, antennas and filters.
本发明公开了一种基于反应烧结的CTLA微波介质材料制备方法，该方法为：将纯度≥99%的CaCO3、La2O3、Al2O3、TiO2和CeO2为主要原料，按0.675CaTiO3‑0.325LaAlO3+0.5%wtCeO2配料，之后将物料湿式球磨混合4h，以乙醇为球磨介质，干燥后压制成型，最后将瓷料在1500~1600℃下烧结6小时。本发明采用反应烧结制备的微波介质陶瓷，其烧结温度处于1500~1600℃，介电常数适中（41.1~47.0），Q×f值高（25700~47800 GHz），谐振频率温度系数（τf）接近零且工艺简单，可用于片式谐振器、天线、滤波器等微波器件的制造。
Preparation method of CTLA microwave dielectric material based on reaction sintering
一种基于反应烧结的CTLA微波介质材料制备方法
ZHOU HUANFU (Autor:in) / ZHOU SHICHENG (Autor:in)
17.11.2020
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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