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Low-sintering anti-ferroelectric ceramic material for high-energy-storage-density capacitors and preparation method thereof
The invention relates to a low-sintering anti-ferroelectric ceramic material for high-energy-storage-density capacitors and a preparation method thereof. The anti-ferroelectric ceramic material comprises a lead-barium-lanthanum-zirconium-tin anti-ferroelectric ceramic phase and a barium-boron-aluminum-silicon glass phase. The general chemical formula of the anti-ferroelectric ceramic material is (Pb<0.91>Ba<0.015>La<0.05>) (Zr<0.6>Sn<0.4>)O<3+x wt%> (y)BaO-(z)B2O3-(1-y-z-w)SiO2, wherein x is greater than 0 and less than or equal to 1.0, y is greater than 0 and less than 1, z is greater than 0and less than 1,and w is greater than 0 and less than 1. In the preparation process, the anti-ferroelectric ceramic material is prepared by a solid-phase sintering method, and a glass sintering aid isintroduced, so that the compressive strength of the anti-ferroelectric ceramic material is remarkably improved, and the sintering temperature of the ceramic is greatly reduced. Compared with the prior art, the material has the characteristics of high energy storage density, high energy storage efficiency, excellent charging and discharging performance and low sintering temperature, is simple in preparation process, and has very important significance for developing pulse power devices such as multilayer ceramic capacitors.
本发明涉及一种高储能密度电容器用低烧反铁电陶瓷材料及其制备方法，所述反铁电陶瓷材料包括：铅钡镧锆锡反铁电陶瓷相和钡硼铝硅玻璃相；所述反铁电陶瓷材料的化学通式为：(Pb0.91Ba0.015La0.05)(Zr0.6Sn0.4)O3+x wt％yBaO‑zB2O3‑wAl2O3‑(1‑y‑z‑w)SiO2，其中0＜x≤1.0，0＜y＜1，0＜z＜1，0＜w＜1。制备过程中通过固相烧结法制备反铁电陶瓷材料，通过引入玻璃烧结助剂，使得反铁电陶瓷材料的耐压强度显著提高，并大幅降低了陶瓷的烧结温度。与现有技术相比，本发明具有储能密度高、储能效率高、充放电性能优异和烧结温度低的特性，同时制备工艺简单，对于开发多层陶瓷电容器等脉冲功率器件具有非常重要的意义。
Low-sintering anti-ferroelectric ceramic material for high-energy-storage-density capacitors and preparation method thereof
The invention relates to a low-sintering anti-ferroelectric ceramic material for high-energy-storage-density capacitors and a preparation method thereof. The anti-ferroelectric ceramic material comprises a lead-barium-lanthanum-zirconium-tin anti-ferroelectric ceramic phase and a barium-boron-aluminum-silicon glass phase. The general chemical formula of the anti-ferroelectric ceramic material is (Pb<0.91>Ba<0.015>La<0.05>) (Zr<0.6>Sn<0.4>)O<3+x wt%> (y)BaO-(z)B2O3-(1-y-z-w)SiO2, wherein x is greater than 0 and less than or equal to 1.0, y is greater than 0 and less than 1, z is greater than 0and less than 1,and w is greater than 0 and less than 1. In the preparation process, the anti-ferroelectric ceramic material is prepared by a solid-phase sintering method, and a glass sintering aid isintroduced, so that the compressive strength of the anti-ferroelectric ceramic material is remarkably improved, and the sintering temperature of the ceramic is greatly reduced. Compared with the prior art, the material has the characteristics of high energy storage density, high energy storage efficiency, excellent charging and discharging performance and low sintering temperature, is simple in preparation process, and has very important significance for developing pulse power devices such as multilayer ceramic capacitors.
本发明涉及一种高储能密度电容器用低烧反铁电陶瓷材料及其制备方法，所述反铁电陶瓷材料包括：铅钡镧锆锡反铁电陶瓷相和钡硼铝硅玻璃相；所述反铁电陶瓷材料的化学通式为：(Pb0.91Ba0.015La0.05)(Zr0.6Sn0.4)O3+x wt％yBaO‑zB2O3‑wAl2O3‑(1‑y‑z‑w)SiO2，其中0＜x≤1.0，0＜y＜1，0＜z＜1，0＜w＜1。制备过程中通过固相烧结法制备反铁电陶瓷材料，通过引入玻璃烧结助剂，使得反铁电陶瓷材料的耐压强度显著提高，并大幅降低了陶瓷的烧结温度。与现有技术相比，本发明具有储能密度高、储能效率高、充放电性能优异和烧结温度低的特性，同时制备工艺简单，对于开发多层陶瓷电容器等脉冲功率器件具有非常重要的意义。
Low-sintering anti-ferroelectric ceramic material for high-energy-storage-density capacitors and preparation method thereof
高储能密度电容器用低烧反铁电陶瓷材料及其制备方法
ZHAI JIWEI (Autor:in) / HUANG KAIWEI (Autor:in) / GE GUANGLONG (Autor:in) / SHEN BO (Autor:in)
27.11.2020
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
Anti-ferroelectric ceramic material and low-temperature sintering method thereof
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