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Rare-earth-doping-free high-Curie-temperature piezoelectric ceramic element and preparation method thereof
The invention discloses a rare-earth-doping-free high-Curie-temperature piezoelectric ceramic element, the general chemical formula of which is (1-x-y)CaBi2Ta2-aNbaO9+xNa0.5-bKbBi2.5Nb2O9+ySrBi2Nb2-cSbcO9+zwt%P, wherein x is greater than or equal to 0.05 and smaller than or equal to 0.85, and y is is greater than or equal to 0 and less than or equal to 0.1, and P is one of or a combination of twoof CoO and MnCO3. The invention also discloses a preparation method of the piezoelectric ceramic element. The piezoelectric ceramic element prepared by the method has the advantages of high Curie temperature and low aging rate.
本发明公开了一种无稀土掺杂高居里温度压电陶瓷元件，所述无稀土掺杂高居里温度压电陶瓷元件的化学通式为：(1‑x‑y)CaBi2Ta2‑aNbaO9+xNa0.5‑bKbBi2.5Nb2O9+ySrBi2Nb2‑cSbcO9+zwt％P，其中，0.05≤x≤0.85，0≤y≤0.1，0
Rare-earth-doping-free high-Curie-temperature piezoelectric ceramic element and preparation method thereof
The invention discloses a rare-earth-doping-free high-Curie-temperature piezoelectric ceramic element, the general chemical formula of which is (1-x-y)CaBi2Ta2-aNbaO9+xNa0.5-bKbBi2.5Nb2O9+ySrBi2Nb2-cSbcO9+zwt%P, wherein x is greater than or equal to 0.05 and smaller than or equal to 0.85, and y is is greater than or equal to 0 and less than or equal to 0.1, and P is one of or a combination of twoof CoO and MnCO3. The invention also discloses a preparation method of the piezoelectric ceramic element. The piezoelectric ceramic element prepared by the method has the advantages of high Curie temperature and low aging rate.
本发明公开了一种无稀土掺杂高居里温度压电陶瓷元件，所述无稀土掺杂高居里温度压电陶瓷元件的化学通式为：(1‑x‑y)CaBi2Ta2‑aNbaO9+xNa0.5‑bKbBi2.5Nb2O9+ySrBi2Nb2‑cSbcO9+zwt％P，其中，0.05≤x≤0.85，0≤y≤0.1，0
Rare-earth-doping-free high-Curie-temperature piezoelectric ceramic element and preparation method thereof
一种无稀土掺杂高居里温度压电陶瓷元件及其制备方法
PENG ZHIHANG (Autor:in) / CAO FENG (Autor:in) / XIANG YANG (Autor:in) / CHEN LI (Autor:in)
25.12.2020
Patent
Elektronische Ressource
Chinesisch
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