Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Wide-temperature-range negative temperature coefficient thermistor material
The invention discloses a wide-temperature-range negative temperature coefficient thermistor material. The chemical formula of the negative temperature coefficient thermistor material is SmMnTiMO4, and M is selected from Al, Zn, Mg or Cr. The negative temperature coefficient thermistor material with the perovskite structure is prepared from Sm, the production cost can be reduced, and the prepared NTC thermistor material has obvious negative temperature coefficient characteristics at -40 to 300 DEG C, is good in consistency and stable in aging performance, and is suitable for manufacturing thermistors used in a wide temperature range.
本发明公开了一种宽温区负温度系数热敏电阻材料。这种负温度系数热敏电阻材料的化学式为SmMnTiMO4，其中，M选自Al、Zn、Mg或Cr。本发明采用Sm来制作具有钙钛矿结构的负温度系数热敏电阻材料，能够降低生产成本，制备得到的NTC热敏电阻材料在‑40～300℃具有明显的负温度系数特性，一致性好，老化性能稳定，适合制造宽温区使用的热敏电阻器。
Wide-temperature-range negative temperature coefficient thermistor material
The invention discloses a wide-temperature-range negative temperature coefficient thermistor material. The chemical formula of the negative temperature coefficient thermistor material is SmMnTiMO4, and M is selected from Al, Zn, Mg or Cr. The negative temperature coefficient thermistor material with the perovskite structure is prepared from Sm, the production cost can be reduced, and the prepared NTC thermistor material has obvious negative temperature coefficient characteristics at -40 to 300 DEG C, is good in consistency and stable in aging performance, and is suitable for manufacturing thermistors used in a wide temperature range.
本发明公开了一种宽温区负温度系数热敏电阻材料。这种负温度系数热敏电阻材料的化学式为SmMnTiMO4，其中，M选自Al、Zn、Mg或Cr。本发明采用Sm来制作具有钙钛矿结构的负温度系数热敏电阻材料，能够降低生产成本，制备得到的NTC热敏电阻材料在‑40～300℃具有明显的负温度系数特性，一致性好，老化性能稳定，适合制造宽温区使用的热敏电阻器。
Wide-temperature-range negative temperature coefficient thermistor material
一种宽温区负温度系数热敏电阻材料
TAN YUXIN (Autor:in) / YANG ANXUE (Autor:in) / YANG DAKAI (Autor:in) / LIN FANGCHENG (Autor:in) / WANG XIAOMING (Autor:in)
09.04.2021
Patent
Elektronische Ressource
Chinesisch
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