Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Preparation method of bismuth sodium bismuth titanate layered piezoelectric ceramic
The invention discloses a preparation method of bismuth sodium titanate layered piezoelectric ceramic. The stoichiometric equation of the bismuth sodium titanate layered piezoelectric ceramic is Na0.5Bi4.5Ti<4-x>CoxO<15-x/2>. A traditional solid-phase reaction method is adopted, the electrical property is improved through adjustment and improvement of a raw material formula and a process and adjustment of the content of B-site doped ions, the optimal sintering temperature is 1,080 DEG C, when x is equal to 0.050, the piezoelectric constant d33 is equal to 33pC/N; when the temperature is 482 DEG C, the high-temperature resistivity rho V is equal to 5.87 * 10 <7> ohm.cm, the Curie temperature Tc is equal to 673 DEG C, the dielectric loss tan(delta) is equal to 0.35%, and the sensitivity of a high-temperature acceleration sensor assembled by using the material can still be kept at 9.54 pC/g at 400 DEG C. The process is simple, can effectively reduce the cost and is suitable for large-scale industrial production.
本发明公开了一种钛酸铋钠铋层状压电陶瓷的制备方法，其化学计量式为Na0.5Bi4.5Ti4‑xCoxO15‑x/2，采用传统的固相反应法，通过原料配方与工艺的调整和改进，调节B位掺杂离子的含量来改善电学性能，最佳烧结温度为1080℃，x=0.050时，其压电常数d33=33pC/N，482℃时高温电阻率ρV=5.87×107Ω·cm，居里温度Tc=673℃，介电损耗tanδ=0.35%，用其组装的高温加速度传感器在400℃下灵敏度仍能保持在9.54pC/g。工艺简单，能够有效降低成本，适合大规模工业化生产。
Preparation method of bismuth sodium bismuth titanate layered piezoelectric ceramic
The invention discloses a preparation method of bismuth sodium titanate layered piezoelectric ceramic. The stoichiometric equation of the bismuth sodium titanate layered piezoelectric ceramic is Na0.5Bi4.5Ti<4-x>CoxO<15-x/2>. A traditional solid-phase reaction method is adopted, the electrical property is improved through adjustment and improvement of a raw material formula and a process and adjustment of the content of B-site doped ions, the optimal sintering temperature is 1,080 DEG C, when x is equal to 0.050, the piezoelectric constant d33 is equal to 33pC/N; when the temperature is 482 DEG C, the high-temperature resistivity rho V is equal to 5.87 * 10 <7> ohm.cm, the Curie temperature Tc is equal to 673 DEG C, the dielectric loss tan(delta) is equal to 0.35%, and the sensitivity of a high-temperature acceleration sensor assembled by using the material can still be kept at 9.54 pC/g at 400 DEG C. The process is simple, can effectively reduce the cost and is suitable for large-scale industrial production.
本发明公开了一种钛酸铋钠铋层状压电陶瓷的制备方法，其化学计量式为Na0.5Bi4.5Ti4‑xCoxO15‑x/2，采用传统的固相反应法，通过原料配方与工艺的调整和改进，调节B位掺杂离子的含量来改善电学性能，最佳烧结温度为1080℃，x=0.050时，其压电常数d33=33pC/N，482℃时高温电阻率ρV=5.87×107Ω·cm，居里温度Tc=673℃，介电损耗tanδ=0.35%，用其组装的高温加速度传感器在400℃下灵敏度仍能保持在9.54pC/g。工艺简单，能够有效降低成本，适合大规模工业化生产。
Preparation method of bismuth sodium bismuth titanate layered piezoelectric ceramic
一种钛酸铋钠铋层状压电陶瓷的制备方法
ZHANG FEIYANG (Autor:in) / YAN FENG (Autor:in) / ZHANG NAN (Autor:in) / YANG SHENGSHUAI (Autor:in) / ZHAO BIN (Autor:in) / LOU YUE (Autor:in) / LI BAOZHU (Autor:in)
28.05.2021
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
Preparation method of sodium bismuth titanate high-temperature piezoelectric ceramic
| Europäisches Patentamt | 2021
| Europäisches Patentamt | 2020
| Europäisches Patentamt | 2020
Preparation method of sodium bismuth titanate-based high-temperature piezoelectric ceramic
| Europäisches Patentamt | 2020
Europäisches Patentamt | 2017