Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Porous silicon carbide ceramic wafer and preparation method thereof
The invention discloses a porous silicon carbide ceramic chip and a preparation method thereof, and belongs to the technical field of silicon carbide ceramic chip preparation. The technical problem to be solved by the invention is to prepare a stable raw material for growing silicon carbide by a physical vapor transport method. The method comprises the following steps: pickling silicon carbide powder with diluted hydrochloric acid, performing drying, performing calcining in a resistance furnace, carrying out ball milling on prepared silicon carbide, polyethyleneimine and ethanol in a ball milling tank, adding epoxy resin, performing stirring, adding tetraethylenepentamine, performing stirring to obtain mixed slurry, performing shaping, and performing demolding; after drying the green body, putting the green body into a resistance furnace, performing heating to 550-600 DEG C at a heating rate of 5-8 DEG C/min, keeping for 30-60 minutes, continuously heating to 1350-1400 DEG C, keeping for 3-5 hours, and then performing cooling along with the furnace to obtain the porous silicon carbide ceramic wafer. The method is simple to operate, low in manufacturing cost and convenient for mass production, can replace accompanying wafers in the actual production process, and saves the cost.
一种多孔碳化硅陶瓷片及其制备方法，它属于碳化硅陶瓷片制备技术领域。本发明要解决的技术问题为制备用于物理气相输送法生长碳化硅的稳定原料。本发将碳化硅粉用稀盐酸酸洗、烘干，放入电阻炉中煅烧，然后制备得到的碳化硅、聚乙烯亚胺、乙醇，置于球磨罐中进行球磨，然后加入环氧树脂，搅拌后再加入四乙烯五胺，搅拌后得到混合浆料，定型后脱模，坯体烘干后，置于电阻炉中内以5‑8℃/min的升温速率升至550‑600℃保持30‑60min,继续升温至1350‑1400℃保持3‑5h，之后随炉冷却，得到一种多孔碳化硅陶瓷片。本发明操作简单，制造成本低，方便大批量生产，可以替代实际生产过程中的陪片，节约成本。
Porous silicon carbide ceramic wafer and preparation method thereof
The invention discloses a porous silicon carbide ceramic chip and a preparation method thereof, and belongs to the technical field of silicon carbide ceramic chip preparation. The technical problem to be solved by the invention is to prepare a stable raw material for growing silicon carbide by a physical vapor transport method. The method comprises the following steps: pickling silicon carbide powder with diluted hydrochloric acid, performing drying, performing calcining in a resistance furnace, carrying out ball milling on prepared silicon carbide, polyethyleneimine and ethanol in a ball milling tank, adding epoxy resin, performing stirring, adding tetraethylenepentamine, performing stirring to obtain mixed slurry, performing shaping, and performing demolding; after drying the green body, putting the green body into a resistance furnace, performing heating to 550-600 DEG C at a heating rate of 5-8 DEG C/min, keeping for 30-60 minutes, continuously heating to 1350-1400 DEG C, keeping for 3-5 hours, and then performing cooling along with the furnace to obtain the porous silicon carbide ceramic wafer. The method is simple to operate, low in manufacturing cost and convenient for mass production, can replace accompanying wafers in the actual production process, and saves the cost.
一种多孔碳化硅陶瓷片及其制备方法，它属于碳化硅陶瓷片制备技术领域。本发明要解决的技术问题为制备用于物理气相输送法生长碳化硅的稳定原料。本发将碳化硅粉用稀盐酸酸洗、烘干，放入电阻炉中煅烧，然后制备得到的碳化硅、聚乙烯亚胺、乙醇，置于球磨罐中进行球磨，然后加入环氧树脂，搅拌后再加入四乙烯五胺，搅拌后得到混合浆料，定型后脱模，坯体烘干后，置于电阻炉中内以5‑8℃/min的升温速率升至550‑600℃保持30‑60min,继续升温至1350‑1400℃保持3‑5h，之后随炉冷却，得到一种多孔碳化硅陶瓷片。本发明操作简单，制造成本低，方便大批量生产，可以替代实际生产过程中的陪片，节约成本。
Porous silicon carbide ceramic wafer and preparation method thereof
一种多孔碳化硅陶瓷片及其制备方法
28.05.2021
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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