Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Zinc oxide resistor disc capable of reducing residual voltage ratio and preparation method thereof
The invention discloses a zinc oxide resistor disc capable of reducing the residual voltage ratio and a preparation method of the zinc oxide resistor disc. The zinc oxide resistor disc is prepared through the four steps of preparation of raw materials of the zinc oxide resistor disc, preparation of slurry, preparation of a green body and sintering. According to the invention, Mg<2+> and Al<3+> ions are jointly infiltrated into ZnO crystal grains in a pre-calcining manner, and due to the fact that the particle size of the Mg<2+> ions is slightly smaller than that of Zn<2+> ions, tensile stress can be formed in ZnO crystal lattices, so that effective infiltration of the Al<3+> ions is promoted, enrichment of the Al<3+> ions near ZnO crystal boundaries is avoided, the Al<3+> ions are infiltrated into the ZnO crystal grains, the resistance of the ZnO crystal grains can be effectively reduced, the concentration of the Al<3+> ions in the crystal boundaries is reduced, the leakage current is not increased, and the residual voltage ratio and the residual voltage of the prepared zinc oxide resistor disc are effectively reduced; and the method is simple in process, easy to control and low in cost.
本发明公开了一种可降低残压比的氧化锌电阻片及其制备方法，该方法经准备氧化锌电阻片的原料、浆料的制备、坯体的制备和烧结四大步骤制备得到氧化锌电阻片；通过前预煅烧的方式将Mg2+和Al3+离子共同渗入ZnO晶粒内部，由于Mg2+离子粒径略小于Zn2+离子，可在ZnO晶格内形成拉应力，促进了Al3+离子的有效渗入，避免Al3+离子在ZnO晶界附近的富集，使Al3+离子向ZnO晶粒内部渗透，可有效降低ZnO晶粒电阻，且减小晶界Al3+离子浓度，这样便不会增大漏电流，所制备的氧化锌电阻片残压比和残压都有效降低。本发明工艺简单，易于控制，成本低廉。
Zinc oxide resistor disc capable of reducing residual voltage ratio and preparation method thereof
The invention discloses a zinc oxide resistor disc capable of reducing the residual voltage ratio and a preparation method of the zinc oxide resistor disc. The zinc oxide resistor disc is prepared through the four steps of preparation of raw materials of the zinc oxide resistor disc, preparation of slurry, preparation of a green body and sintering. According to the invention, Mg<2+> and Al<3+> ions are jointly infiltrated into ZnO crystal grains in a pre-calcining manner, and due to the fact that the particle size of the Mg<2+> ions is slightly smaller than that of Zn<2+> ions, tensile stress can be formed in ZnO crystal lattices, so that effective infiltration of the Al<3+> ions is promoted, enrichment of the Al<3+> ions near ZnO crystal boundaries is avoided, the Al<3+> ions are infiltrated into the ZnO crystal grains, the resistance of the ZnO crystal grains can be effectively reduced, the concentration of the Al<3+> ions in the crystal boundaries is reduced, the leakage current is not increased, and the residual voltage ratio and the residual voltage of the prepared zinc oxide resistor disc are effectively reduced; and the method is simple in process, easy to control and low in cost.
本发明公开了一种可降低残压比的氧化锌电阻片及其制备方法，该方法经准备氧化锌电阻片的原料、浆料的制备、坯体的制备和烧结四大步骤制备得到氧化锌电阻片；通过前预煅烧的方式将Mg2+和Al3+离子共同渗入ZnO晶粒内部，由于Mg2+离子粒径略小于Zn2+离子，可在ZnO晶格内形成拉应力，促进了Al3+离子的有效渗入，避免Al3+离子在ZnO晶界附近的富集，使Al3+离子向ZnO晶粒内部渗透，可有效降低ZnO晶粒电阻，且减小晶界Al3+离子浓度，这样便不会增大漏电流，所制备的氧化锌电阻片残压比和残压都有效降低。本发明工艺简单，易于控制，成本低廉。
Zinc oxide resistor disc capable of reducing residual voltage ratio and preparation method thereof
可降低残压比的氧化锌电阻片及其制备方法
CAO WEI (Autor:in) / WAN SHUAI (Autor:in) / GU SHANQIANG (Autor:in) / TAN JIN (Autor:in) / REN XIN (Autor:in) / YAO ZHENG (Autor:in) / LIU XIN (Autor:in) / DU XUESONG (Autor:in) / LIU ZIHAO (Autor:in) / WANG ZHIKAI (Autor:in)
27.07.2021
Patent
Elektronische Ressource
Chinesisch
| Europäisches Patentamt | 2024
Zinc oxide nonlinear resistor disc and preparation method thereof
| Europäisches Patentamt | 2021
| Europäisches Patentamt | 2023
Zinc oxide resistor disc and manufacturing method thereof
| Europäisches Patentamt | 2015
Zinc oxide high-gradient nonlinear resistor disc and preparation method thereof
| Europäisches Patentamt | 2024