Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Preparation method of fine indium sulfide powder and target material
The invention discloses a preparation method of fine indium sulfide powder and a target material, and the preparation method of the fine indium sulfide powder comprises the following steps: introducing H2S gas into an In2 (SO4) 3 solution, reacting under stirring to synthesize indium sulfide, and after the reaction is finished, rinsing, filtering, calcining, ball-milling and sieving the synthesized product to obtain indium sulfide powder with the particle size D90 of 20-40 [mu] m; and allowing the indium sulfide powder to be subjected to airflow crushing, wherein the feeding pressure and crushing pressure of airflow crushing are 8-12 kg, the feeding speed is 3-5 kg/h, and continuing ventilation for 3-5 min after feeding is finished to obtain the fine indium sulfide powder with D90 smaller than 5 micrometers. The prepared indium sulfide powder is beta-In2S3 of a tetragonal structure, the particle size D90 is smaller than 5 microns, the indium sulfide powder is used for preparing the target material, the quality of the target material is improved, the average grain size of the target material is smaller than 5 microns, the resistivity is smaller than 0.5 K omega/cm, the relative density is larger than or equal to 97%, the impurity content is low, and a film formed through sputtering is good in stability, uniform in thickness distribution and consistent in grain size.
本发明公开了一种微细硫化铟粉体及靶材的制备方法，所述微细硫化铟粉体的制备方法包括如下步骤：将H2S气体通入In2(SO4)3溶液中，搅拌下反应合成硫化铟，反应结束后，对合成产物进行漂洗、过滤、煅烧、球磨及过筛，得到粒度D90为20～40μm的硫化铟粉体；将硫化铟粉体进行气流粉碎，气流粉碎的加料压力和粉碎压力为8～12kg，加料速度为3～5kg/h的匀速，加料结束后继续通气3～5min，得到D90＜5μm的微细硫化铟粉体。本发明制得的硫化铟粉体为四方结构的β‑In2S3，粒度D90＜5μm，将其用于制备靶材，利于提高靶材的品质，使靶材的平均晶粒度＜5μm，电阻率＜0.5KΩ/cm，相对密度≥97％，杂质含量低，溅射所形成薄膜的稳定性好、厚度分布均匀、及晶粒大小一致。
Preparation method of fine indium sulfide powder and target material
The invention discloses a preparation method of fine indium sulfide powder and a target material, and the preparation method of the fine indium sulfide powder comprises the following steps: introducing H2S gas into an In2 (SO4) 3 solution, reacting under stirring to synthesize indium sulfide, and after the reaction is finished, rinsing, filtering, calcining, ball-milling and sieving the synthesized product to obtain indium sulfide powder with the particle size D90 of 20-40 [mu] m; and allowing the indium sulfide powder to be subjected to airflow crushing, wherein the feeding pressure and crushing pressure of airflow crushing are 8-12 kg, the feeding speed is 3-5 kg/h, and continuing ventilation for 3-5 min after feeding is finished to obtain the fine indium sulfide powder with D90 smaller than 5 micrometers. The prepared indium sulfide powder is beta-In2S3 of a tetragonal structure, the particle size D90 is smaller than 5 microns, the indium sulfide powder is used for preparing the target material, the quality of the target material is improved, the average grain size of the target material is smaller than 5 microns, the resistivity is smaller than 0.5 K omega/cm, the relative density is larger than or equal to 97%, the impurity content is low, and a film formed through sputtering is good in stability, uniform in thickness distribution and consistent in grain size.
本发明公开了一种微细硫化铟粉体及靶材的制备方法，所述微细硫化铟粉体的制备方法包括如下步骤：将H2S气体通入In2(SO4)3溶液中，搅拌下反应合成硫化铟，反应结束后，对合成产物进行漂洗、过滤、煅烧、球磨及过筛，得到粒度D90为20～40μm的硫化铟粉体；将硫化铟粉体进行气流粉碎，气流粉碎的加料压力和粉碎压力为8～12kg，加料速度为3～5kg/h的匀速，加料结束后继续通气3～5min，得到D90＜5μm的微细硫化铟粉体。本发明制得的硫化铟粉体为四方结构的β‑In2S3，粒度D90＜5μm，将其用于制备靶材，利于提高靶材的品质，使靶材的平均晶粒度＜5μm，电阻率＜0.5KΩ/cm，相对密度≥97％，杂质含量低，溅射所形成薄膜的稳定性好、厚度分布均匀、及晶粒大小一致。
Preparation method of fine indium sulfide powder and target material
一种微细硫化铟粉体及靶材的制备方法
SHEN WENXING (Autor:in) / BAI PINGPING (Autor:in) / TONG PEIYUN (Autor:in) / XIE XIAOHAO (Autor:in)
06.08.2021
Patent
Elektronische Ressource
Chinesisch
Indium sesquioxide powder and preparation method of target material of indium sesquioxide powder
| Europäisches Patentamt | 2022
Zinc-doped indium oxide powder, sputtering target material and preparation method thereof
| Europäisches Patentamt | 2022
| Europäisches Patentamt | 2023
Hydrothermal Preparation and Characterization of Nanocrystalline Powder of -Indium Sulfide
| British Library Online Contents | 1998
ZINC-DOPED INDIUM OXIDE POWDER, SPUTTERING TARGET MATERIAL, AND PREPARATION METHODS THEREFOR
| Europäisches Patentamt | 2023