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CHEMICAL VAPOUR INFILTRATION OR DEPOSITION PROCESS
The present invention relates to a chemical vapour infiltration or deposition process, comprising at least: - the formation of pyrocarbon in the porosity of a porous substrate or on a surface of a substrate, wherein the substrate is placed in a reaction chamber and the pyrocarbon is formed from a gas phase introduced into the reaction chamber, this gas phase comprising at least pyrocarbon precursor compound and carbon dioxide.
本发明涉及一种化学气相渗透或化学气相沉积的方法,该方法至少包括:在多孔衬底的孔隙中或在衬底的表面上形成高温碳,其中将衬底置于反应室中并且由引入反应室的气相形成高温碳,该气相包含至少一种高温碳前体化合物和二氧化碳。
CHEMICAL VAPOUR INFILTRATION OR DEPOSITION PROCESS
The present invention relates to a chemical vapour infiltration or deposition process, comprising at least: - the formation of pyrocarbon in the porosity of a porous substrate or on a surface of a substrate, wherein the substrate is placed in a reaction chamber and the pyrocarbon is formed from a gas phase introduced into the reaction chamber, this gas phase comprising at least pyrocarbon precursor compound and carbon dioxide.
本发明涉及一种化学气相渗透或化学气相沉积的方法,该方法至少包括:在多孔衬底的孔隙中或在衬底的表面上形成高温碳,其中将衬底置于反应室中并且由引入反应室的气相形成高温碳,该气相包含至少一种高温碳前体化合物和二氧化碳。
CHEMICAL VAPOUR INFILTRATION OR DEPOSITION PROCESS
化学气相渗透或化学气相沉积方法
POTIN JEAN-FRANCOIS DANIEL RENE (Autor:in)
10.08.2021
Patent
Elektronische Ressource
Chinesisch
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