Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Solid solution multiferroic film, preparation method and electronic device applied to 5G storage technology
The invention relates to a solid solution multiferroic thin film, a preparation method and an electronic device comprising the multiferroic thin film and applied to a 5G storage technology. The thin film is a complex oxide solid solution with a pseudo perovskite structure, and the chemical formula of the thin film is (1-x<1>-x<2>)LM<(1-y)/2>FeN<(1-y)/2>O<3>x<1>Rx<2>Q, wherein y is equal to 0-1, x<1> is equal to 0-1, x<2> is equal to 0-1, and the sum of x<1> and x<2> is less than or equal to 1; L is selected from one or more of Bi, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu or Y; M and N are respectively selected from Mg, Ti, Hf, Co, Mn, Ni or Zr, and can be the same or different; R is LFeO3; Q is an oxide of L, M and N; and the thin film is a rhombohedral phase and orthorhombic phase solid solution and is polycrystal. The thin film has higher room-temperature electric polarization intensity and lower room-temperature leakage current density.
本申请涉及一种固溶体多铁薄膜、制备方法及包含该多铁薄膜的应用于5G存储技术的电子器件。薄膜为赝钙钛矿结构的复杂氧化物固溶体，化学式如下：(1‑x1‑x2)LM(1‑y)/2FeyN(1‑y)/2O3x1Rx2Q；其中，y=0~1，x1=0~1，x2=0~1，x 1+x 2≤1；L选自Bi、La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu或Y中的一种或多种；M、N分别选自Mg、Ti、Hf、Co、Mn、Ni或Zr，可相同或不同；R是LFeO3；Q是L、M、N的氧化物；薄膜为菱方相和正交相的固溶体，为多晶。薄膜具有更大的室温电极化强度，更低的室温漏电流密度。
Solid solution multiferroic film, preparation method and electronic device applied to 5G storage technology
The invention relates to a solid solution multiferroic thin film, a preparation method and an electronic device comprising the multiferroic thin film and applied to a 5G storage technology. The thin film is a complex oxide solid solution with a pseudo perovskite structure, and the chemical formula of the thin film is (1-x<1>-x<2>)LM<(1-y)/2>FeN<(1-y)/2>O<3>x<1>Rx<2>Q, wherein y is equal to 0-1, x<1> is equal to 0-1, x<2> is equal to 0-1, and the sum of x<1> and x<2> is less than or equal to 1; L is selected from one or more of Bi, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu or Y; M and N are respectively selected from Mg, Ti, Hf, Co, Mn, Ni or Zr, and can be the same or different; R is LFeO3; Q is an oxide of L, M and N; and the thin film is a rhombohedral phase and orthorhombic phase solid solution and is polycrystal. The thin film has higher room-temperature electric polarization intensity and lower room-temperature leakage current density.
本申请涉及一种固溶体多铁薄膜、制备方法及包含该多铁薄膜的应用于5G存储技术的电子器件。薄膜为赝钙钛矿结构的复杂氧化物固溶体，化学式如下：(1‑x1‑x2)LM(1‑y)/2FeyN(1‑y)/2O3x1Rx2Q；其中，y=0~1，x1=0~1，x2=0~1，x 1+x 2≤1；L选自Bi、La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu或Y中的一种或多种；M、N分别选自Mg、Ti、Hf、Co、Mn、Ni或Zr，可相同或不同；R是LFeO3；Q是L、M、N的氧化物；薄膜为菱方相和正交相的固溶体，为多晶。薄膜具有更大的室温电极化强度，更低的室温漏电流密度。
Solid solution multiferroic film, preparation method and electronic device applied to 5G storage technology
固溶体多铁薄膜、制备方法及应用于5G存储技术的电子器件
JIA TINGTING (Autor:in) / HU FANG (Autor:in) / FANG WEI (Autor:in) / YU SHUHUI (Autor:in) / SUN RONG (Autor:in)
13.08.2021
Patent
Elektronische Ressource
Chinesisch
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