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High-performance aluminum nitride ceramic substrate prepared by vacuum hot pressing sintering method and preparation method of high-performance aluminum nitride ceramic substrate
The invention discloses a high-performance aluminum nitride ceramic substrate prepared by a vacuum hot pressing sintering method and a preparation method, and relates to the technical field of aluminum nitride ceramics. The material is prepared from the following components in parts by weight through a vacuum hot pressing sintering method: 90-100 parts of aluminum nitride and 0-10 parts of rare earth hydride, or 90-100 parts of aluminum nitride, 0-10 parts of rare earth hydride and 0-10 parts of rare earth fluoride. According to the high-performance aluminum nitride ceramic substrate prepared through the vacuum hot pressing sintering method, the rare earth hydride, the rare earth hydride and the rare earth fluoride serve as sintering aids, the sintering temperature can be reduced by adding the rare earth hydride and the rare earth fluoride, and sintering densification is promoted; the selected sintering aid can react with oxygen impurities, crystal lattices are purified, and the heat conductivity is effectively improved. According to the ceramic substrate prepared through the vacuum thermal sintering method, generation of aluminum nitride is facilitated under the action of furnace body pressure and the flowing nitrogen atmosphere, and sintering densification is further promoted; meanwhile, the size of crystal grains can be effectively reduced, so the bending strength of ceramic is improved.
本发明公开了一种真空热压烧结法制备的高性能氮化铝陶瓷基板及制备方法，涉及氮化铝陶瓷技术领域。其由以下重量份组分用真空热压烧结法制备得到：氮化铝90‑100份，稀土氢化物0‑10份；或者，氮化铝90‑100份，稀土氢化物0‑10份，稀土氟化物0‑10份。本发明提供的真空热压烧结法制备的高性能氮化铝陶瓷基板，稀土氢化物、稀土氢化物与稀土氟化物作为烧结助剂，其加入有助于降低烧结的温度，促进烧结致密；选用的烧结助剂可与氧杂质反应，净化晶格，有效提高热导率。本发明提供的真空热烧结法进行制备的陶瓷基板，在炉体压力的作用下，以及流动氮气氛围下有利于氮化铝的生成，进一步促进烧结致密化，同时能有效减小晶粒的尺寸，从而提高陶瓷的抗弯强度。
High-performance aluminum nitride ceramic substrate prepared by vacuum hot pressing sintering method and preparation method of high-performance aluminum nitride ceramic substrate
The invention discloses a high-performance aluminum nitride ceramic substrate prepared by a vacuum hot pressing sintering method and a preparation method, and relates to the technical field of aluminum nitride ceramics. The material is prepared from the following components in parts by weight through a vacuum hot pressing sintering method: 90-100 parts of aluminum nitride and 0-10 parts of rare earth hydride, or 90-100 parts of aluminum nitride, 0-10 parts of rare earth hydride and 0-10 parts of rare earth fluoride. According to the high-performance aluminum nitride ceramic substrate prepared through the vacuum hot pressing sintering method, the rare earth hydride, the rare earth hydride and the rare earth fluoride serve as sintering aids, the sintering temperature can be reduced by adding the rare earth hydride and the rare earth fluoride, and sintering densification is promoted; the selected sintering aid can react with oxygen impurities, crystal lattices are purified, and the heat conductivity is effectively improved. According to the ceramic substrate prepared through the vacuum thermal sintering method, generation of aluminum nitride is facilitated under the action of furnace body pressure and the flowing nitrogen atmosphere, and sintering densification is further promoted; meanwhile, the size of crystal grains can be effectively reduced, so the bending strength of ceramic is improved.
本发明公开了一种真空热压烧结法制备的高性能氮化铝陶瓷基板及制备方法，涉及氮化铝陶瓷技术领域。其由以下重量份组分用真空热压烧结法制备得到：氮化铝90‑100份，稀土氢化物0‑10份；或者，氮化铝90‑100份，稀土氢化物0‑10份，稀土氟化物0‑10份。本发明提供的真空热压烧结法制备的高性能氮化铝陶瓷基板，稀土氢化物、稀土氢化物与稀土氟化物作为烧结助剂，其加入有助于降低烧结的温度，促进烧结致密；选用的烧结助剂可与氧杂质反应，净化晶格，有效提高热导率。本发明提供的真空热烧结法进行制备的陶瓷基板，在炉体压力的作用下，以及流动氮气氛围下有利于氮化铝的生成，进一步促进烧结致密化，同时能有效减小晶粒的尺寸，从而提高陶瓷的抗弯强度。
High-performance aluminum nitride ceramic substrate prepared by vacuum hot pressing sintering method and preparation method of high-performance aluminum nitride ceramic substrate
一种真空热压烧结法制备的高性能氮化铝陶瓷基板及制备方法
WU SHANGHUA (Autor:in) / WANG LIANG (Autor:in) / GUO WEIMING (Autor:in) / SHENG PENGFEI (Autor:in) / LIN KUNJI (Autor:in)
07.09.2021
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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