Method for growing CZT single-crystal ingot: Fid-Bau Portal

Method for growing CZT single-crystal ingot

PANG HAO / XIE YULING

The invention discloses a method for growing a CZT single-crystal ingot, belonging to the technical field of semiconductor material manufacturing processes. The method for growing the CZT single-crystal ingot comprises the following steps: step A, mixing amorphous diboron trioxide and micron-sized graphite powder according to a mass ratio to form mixed slurry; step B, uniformly coating the inner wall of a pyrolytic boron nitride crucible with the mixed slurry via a swabbing method or a pulsed arc discharge deposition method; and step C, placing a zinc telluride polycrystal synthetic material in a shouldering area in the pyrolytic boron nitride crucible, placing a seed crystal in a seed crystal area, then placing the pyrolytic boron nitride crucible in a quartz container, and successively carrying out heating, melting, cooling and CZT single-crystal ingot growing so as to obtain the CZT single-crystal ingot after the growth is completed. According to the invention, amorphous diboron trioxide and graphite powder are mixed to form the mixed slurry, the inner wall of the pyrolytic boron nitride crucible is coated with the mixed slurry, an included angle between a growth plane and a cutting plane is smaller than 4 degrees, and Zn element content fluctuation of different areas on the CZT substrate slice is reduced.

本发明公开了一种生长CZT单晶锭的方法，属于半导体材料制造工艺技术领域，该种生长CZT单晶锭的方法，包括以下步骤：步骤A、将无定形无定形三氧化二硼和微米级石墨粉质量比混合形成混合浆料；步骤B、将混合浆料以刷浆法或脉冲电弧放电沉积法均匀涂覆在热解氮化硼坩埚内壁上；步骤C、将碲化锌多晶体合成料置于热解氮化硼坩埚内放肩区，并在籽晶区放入籽晶，然后将热解氮化硼坩埚放入石英容器内，加热熔融、冷却、CZT单晶锭生长，生长完成后获得一种CZT单晶锭。且本发明将无定形三氧化二硼和石墨粉混合形成混合浆料涂覆在热解氮化硼坩埚内壁上，使得生长平面和切割面的夹角小于4°，减小CZT衬底片上不同区域的Zn元素含量波动。

Zugriff

Download

Seitennavigation

Dokumentinformationen

Ähnliche Titel

Exportieren, teilen und zitieren